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三重大学教員紹介

教員情報

職名
教授
氏名
ひらまつ かずまさ
平松 和政
生年月
1952.12
所属
部局
工学研究科
学科・専攻
電気電子工学専攻
講座
電子物性工学
教育研究分野
 
TEL
 
FAX
 
E-mail
hiramatu@elec. (末尾に mie-u.ac.jp を補ってください)
個人のホームページ
学歴
名古屋大学工学部 学士課程 (~1975年)
名古屋大学大学院工学研究科 博士課程・博士後期課程 (~1983年) 満了
学位
1986.02 工学博士 名古屋大学
所属学会
応用物理学会 日本結晶成長学会 日本結晶成長学会バルク分科会 応用物理学会 応用電子物性分科会 応用物理学会 結晶工学分科会 応用物理学会 薄膜表面物理分科会 Material Research Society 電子情報通信学会 American Physical Society 照明学会
社会活動
東海工学教育協会,東海工学教育協会常任理事
職歴
1977.04~1980.03 鳴海製陶株式会社 特殊磁器、ハイブリッド集積回路の研究・開発 技術担当
1983.04~1989.02 名古屋大学工学部 電子工学科 助手
1989.03~1991.03 名古屋大学工学部 電子工学科 講師
1991.04~1997.03 名古屋大学大学院工学研究科 電子工学専攻 助教授
1995.10~1995.12 North Carolina State University 文部科学省在外研究員 客員助教授
1997.04~2006.03 三重大学工学部 電気電子工学科 教授
2006.04~ 三重大学大学院工学研究科 電気電子工学専攻 教授
学術(芸術)賞
 
専門分野
半導体工学 オプトエレクトロニクス 結晶成長工学
現在の研究課題
Ⅲ族窒化物半導体の結晶成長、物性評価、および光・電子デバイス応用に関する研究
担当科目
電子デバイス工学特論
オプトエレクトロニクス特論
学術英語論文発表
国際会議発表演習
論文発表演習
電気電子工学特別研究Ⅰ
電気電子工学特別研究Ⅱ
電気電子工学特別研究Ⅲ
電気電子工学特別研究Ⅳ
電気電子物性論Ⅱ
半導体工学Ⅰ
半導体工学Ⅱ
量子力学
基礎物理学ⅢA
主な業績等
X-ray analysis of twist and tilt of GaN prepared by facet-controlled epitaxial lateral overgrowth 共著 2003.07 Japanese Journal of Applied Physics Part 2 Letters 42 732-734
Photoluminescence of Mg-doped GaN grown by metalorganic chemicalvapor depositionb 共著 2003.07 Journal of Vacuum Science & Technology A 21 838-841
High performance of Schottky detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer 共著 2003.11 Physica Status Solidi (a) 200 151-154
Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X-ray (SX) region (10-100 nm) 共著 2003.11 Physica Status Solodi (a) 200 147-150
Antireflection structure of self-organized GaN nanotips 共著 2003.08 Proc. 2002 Conference on Optoelectronic and Microelectronic Materials and Devices 79-82
Self-organized GaN nanotips for cold cathode application 共著 2003.08 Proceedings of 2002 Confernce on Optoelectronic and Microelectronic Materials and Devices 103-106
Responsivity and electrical characteristics of GaN based Schottky barrier UV detectors with transparent electrode in the near UV 共著 2003.08 Proc. 2002 Confernce on Optoelectronic and Microelectronic Materials and Devices 107-110
Improved optical properties using self-organized GaN nanotip structure 単著 2003.10 Physica Status Solidi (c) 0 2566-2569
Spatially resolved cathodoluminescence study of selected-area ELO-GaN grown on Si(111) substrates 単著 2003.12 Physica Status Solidi (c) 0 2644-2649
Growth of high-quality GaN on FACELO substrate by raised-pressure HVPE 単著 2003.12 Physica Status Solidi (c) 0 2159-2162
High-quality AlN epitaxial films on (0001)-faced sapphire and 6H-SiC substrate 共著 2003.12 Physica Status Solidi (c) 0 2023-2026
TEM analysis of threading dislocations in crack-free AlxGa1-xN grown on an AlN(0001) template 単著 2003.12 Physica Status Solidi (c) 0 2444-2447
MOVPE growth and n-type conductivity control of high-quality Si-doped Al0.5Ga0.5N using epitaxial AlN as an underlying layer 単著 2003.12 Physica Status Solidi (c) 0 2128-2131
Responsivity spectra of GaN based UVdetectors in VUV and SX region 共著 2003.06 UVSOR ACTIVITY REPORT 2002 132-133
Characterization of GaN based UV detectors in the near UV and VUV region using annealed Schottky electrode 共著 2003.06 UVSOR ACTIVITY REPORT 2002 146-147
Metalorganic vapor phase epitaxy growth and study of stress in AlGaN using epitaxial AlN as underlying laver 共著 2003.06 Japanese Journal of Applied Physics Part2 Letters 42 572-574
Freestanding GaN substrates by advanced facet-controlled epitaxial lateral overgrowth technique with masking side faces 共著 2005.01 Japanese Journal of Applied Physics Part2-Letters & Express Leters 44 24-26
Influence of etching condition on surface morphology of AlN and GaN layers 共著 2004.09 Physica Status Solidi A 201 2755-2759
Time-resolved nonlinear luminescence of excitonic transitions in GaN 共著 2004.07 Journal of Applied Physics 96 138-143
Characterization of III-nitride based Schottky UV detectors with wide detectable wavelength range (360-10 nm) using synchrotron radiation 共著 2004.08 Material Research Society Symposium Proceedings 798 53-58
Fabrication of carbon nanotube array and its field emission property 共著 2004.05 J. Vac. Sci. Technol. B 22 22 1335-1337
High Quality AlGaN/AlN Superlattices grown on AlN/Sapphire Template by MOVPE 共著 2005.01 CONFERENCE SERIES NUMBER 184 COMPOUND SEMICONDUCTORS 2004 247-250
Growth characteristics of carbon nanotubes on nanotip-formed substrate 共著 2006.03 Journal of vacuum Science & Technology B 24 1004-1007
Influence of Si doping on the optical and structual properties of InGaN films 共著 2006.01 JOURNAL OF CRYSTAL GROWTH 374-378
Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer 共著 2005.08 Mater. Res. Soc. Symp. Proc. 831 1-6
Fablication and characterization of UV Schottky detectors by using a freestanding GaN substrate 共著 2005.08 Mater. Res. Soc. Symp. Proc. 831 1-6
Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy 共著 2005.04 Japanese Journal of Applied Physics 44 505-507
High Quality AlGaN/AlN Superlattices grown on AlN/Sapphire Template by MOVPE 共著 2005.05 CONFERENCE SERIES NUMBER 184 COMPOUND SEMICONDUCTORS 2004 247-250
Simulation of InGaP Liquid Phase Epitaxy Incuuding Convention 共著 2006.01 THEORETICAL AND APPLIED NECHANICS JAPAN 55 279-284
Enhanced emission efficiency of InGaN films with Si Doping 単著 2006.06 Physica Status Solidi (c) 3 1944-1948
Fabrication of thick AlN film by low pressure hydride vapor phase epitaxy 共著 2006.06 Physica Status Solidi (c) 3 1479-1482
n-type conductivity control of AlGaN with high Al mole fraction 共著 2006.06 Physica Status Solidi (c) 3 1435-1438
Enhancement of blue emission from Mg-doped GaN activated at low temperature in O2/N2 mixture 共著 2006.09 Physica Status Solidi (c) 3 2750-2753
Influence of growth conditions on Al incorporation to AlGaN (X>0.4) grown by MOVPE 共著 2007.01 Journal of Crystal Growth 298 372-374
Influence of growth interruption and Si doping on the structural and optical properties of AlGaN/AlN (x>0.5) multiple quantum wells 共著 2007.01 Journal of Crystal Growth 298 500-503
ファセット制御技術による高品質窒化分半導体の作製 単著 2006.04 応用物理 75 467-
Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model 共著 2007.02 IPSJ Transactions on Mathematical Modeling and Applications 48 147-157
High temperature growth of AIN film by LP-HVPE 共著 2007.05 Physica Status Solidi (c) 4 2252-2255
Synthesis of III-nitride microcrystals using metal-EDTA complexes 共著 2007.05 Physica Status Solidi (c) 4 2346-2349
Dependence of In mole fraction in InGaN on GaN facets 共著 2007.05 Physica Status Solidi (c) 4 2383-2386
Blue emission from InGaN/GaN hexagonal pyramid structures 共著 2007.07 Superlattices and Microstructures 41 341-346
Supression of crack generation using high-compressive-strain AlN/Sapphire template for hydride vapor phase epitaxy of thick AlN film 共著 2007.07 Japanese Journal of Applied Physics 46 552-555
Optical characterization of Japanese papers for application to the LED lightning system with human sensitivity 共著 2007.11 Proc. 1st International Confernce on White LEDs and Solid State Lighting 440-443
Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE 共著 2007.05 Physica Status Solidi (c) 4 2494-2497
Selective area growth of III-nitride and their application for emitting devices 共著 2007.11 Proc. 1st International Confernce on White LEDs and Solid State Lighting 72-77
Optical Characterization of Japanese Papers for Application in the LED Lighting System with Human Sensitivity 共著 2008.05 J. Light & Vis. Env. 32 218-221
Selective Area Growth of Ⅲ-Nitride and Their Application for Emitting Devices 共著 2008.05 J. Light & Vis. Env. 32 177-182
Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer 共著 2008.04 Physica Status Solidi (c) 5 1818-1821
Improved optical properties of AlGaN using periodic structures 共著 2008.04 Physica Status Solidi (c) 5 1822-1824
Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia 共著 2008.05 Physica Status Solidi (c) 5 1522-1524
Growth of crack-free AlGaN ons elective-area-growth GaN 共著 2008.11 Journal of Crystal Growth 310 4885-4887
Reactor-pressure dependence of growthof a-plane GaN on r-plane sapphire 共著 2008.11 Journal of Crystal Growth 310 4979-4982
HVPE growth of c-plane AlN on a-plane sapphire using nitridation layer 共著 2011.02 Physica Status Solidi (c) 8 470-472
HVPE growth of AlN on trench-patterned 6H-SiC substrates 共著 2011.02 Physica Status Solidi (c) 8 467-469
Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN 共著 2011.04 Applied Physics Express 4 421031-421032
HVPE growth of thick AlN on trench-patterned substrate 共著 2011.05 Physica Status Solidi (c) 8 1483-1486
Recombination dynamics of localized excitons in AlxGa1-xN (0.37<x<0.81) ternary alloys 共著 2011.07 Physica Status Solidi (c) 8 2133-2135
AlN homo epitaxial growth on sublimation-AlNsubstrate by low-pressure HVPE 共著 2012.07 Journal of Crystal Growth 350 69-71
Photoluminescence due to Inelastic Biexcitation Scattering from an Al0.61Ga0.39N Ternary Alloy Epitaxial Layer at Room Temperature 共著 2012.07 Applied Physics Express 5 072401-1-072401-3
Correlation between in-plane strain and optical and optical polarization of Si-doped AlGaN epitaxial layers as a function of Al content and Si concentration 共著 2012.08 Journal of Applied Physics 112 033512-1-033512-5
Interaction of the dual effects triggered by AlN interlayers in thick GaN grown on 3C-SiC/Si substrates 共著 2012.09 Journal of Physics D: Applied Physics 38 385101-1-385101-4
Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources 共著 2013.01 Japanese Journal of Applied Physics 52 01AF03-1-01AF03-3
Fabrication of Binary Diffractive Lenses and the Application to LED Lighting for Controlling Luminosity Distribution 共著 2013.03 Optics and Photonics Journal 3 67-73
Effects of Si in high-quality AlN grown by MOVPE on trench-patterned template 共著 2013.03 Journal of Crystal Growth 370 74-77
Study on the effects of AlN interlayer in thick GaN grown on 3C-SiC/Si substrates 共著 2013.03 Journal of Crystal Growth 370 254-258
Impacts of Si-doping and resultant cation vacancy formation:on the luminescence dynamics for the near-band-edge emission:of Al0.6Ga0.4N films grown on AlN templates by metalorganic:vapor phase epitaxy 共著 2013.06 Journal of Applied Physics 113 213506-1-213506-6
Cross-sectionalX-raymicrodiffractionstudyofathickAlN film grown:on atrench-patternedAlN/α-Al2O3 template 共著 2013.07 Journal ofCrystalGrowth 381 37-42
Inhomogeneous distribution of defect-related emission in Si-doped AlGaN:epitaxial layers with different Al content and Si concentration 共著 2014.02 Journal of Applied Physics 115 053509-1-053509-6
Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates 共著 2013.05 Journal of Applied Physics 52 08JB07-1-08JB07-5
Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers:Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy 共著 2013.05 Journal of Applied Physics 52 08JL07-1-08JL07-4
AlN Grown on a- and n-Plane Sapphire Substrates:by Low-Pressure Hydride Vapor Phase Epitaxy 共著 2013.08 Journal of Applied Physics 52 08JB31-1-08JB31-4
Selective Area Growth of Semipolar (2021) and (2021) GaN Substrates by Metalorganic Vapor Phase Epitaxy 2013.05 Journal of Applied Physics 52 08JC06-1-08JC06-4
Properties of GaN grown on Si(111) substrates dependent on the thickness:of 3C-SiC intermediate layers 共著 2014.02 Journal of Applied Physics 115 063102-1-063102-5
Anisotropic crystalline morphology of:epitaxial thick AlN films grown on:triangular-striped AlN/sapphire:template 共著 2013.02 Phys. Status Solidi (a) 1-5
Crack- free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC:intermediate layer 2014.04 Physica Status Solidi (a) 211 744-747
High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure:hydride vapor phase epitaxy 共著 2014.06 Japanese Journal of Applied Physics 53 05FL03-1-05FL03-4
Selective-area growth of GaN on non- and semi-polar bulk GaN substrates 共著 2014.06 Japanese Journal of Applied Physics 53 05FL04-1-05FL04-5
MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer 共著 2014.06 Japanese Journal of Applied Physics 53 05FL09-1-05FL09-4
Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in highrefractive-:index media 共著 2015.04 Optics Communications 341 64-68
光技術動向調査報告書 共著 2005.03 財団法人 光産業技術振興協会
ワイドギャップ半導体 光・電子デバイス 共著 2006.03 森北出版株式会社
新インターユニバーシティ 半導体工学 共著 2009.07 オーム社
III族窒化物系ナノアンテナ・フォトニック結晶を用いた紫外光制御 単著
都市エリア産学官連携促進事業三重・伊勢湾岸エリア 成果報告書 共著
ナノフォトニクス構造により配光制御した照明用発光ダイオードに関する研究


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