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三重大学教員紹介

教員情報

職名
教授
氏名
みやけひでと
三宅 秀人
生年月
1963.10
所属
部局
地域イノベーション学研究科
学科・専攻
工学イノベーションユニット
講座
 
教育研究分野
 
TEL
 
FAX
 
E-mail
miyake@elec. (末尾に mie-u.ac.jp を補ってください)
個人のホームページ
 
学歴
山梨大学工学部 学士課程 (~1986年)
大阪大学大学院 基礎工学研究科 物理系専攻 修士課程・博士前期課程 (~1988年) 卒業・修了
学位
1994.04 博士(工学) 大阪大学
所属学会
応用物理学会 多元系機能性材料研究会 Material Reseach Society 応用物理学会 結晶工学分科会 応用物理学会 応用電子物性研究会
社会活動
 
職歴
1988.04~1997.03 三重大学工学部  文部教官 助手
1997.04~2007.03 三重大学工学部  文部科学教官 助教授
2007.04~ 三重大学工学部  文部科学教員 准教授
学術(芸術)賞
 
専門分野
半導体工学 化合物半導体の結晶成長
現在の研究課題
窒化物半導体のナノ構造制御
担当科目
基礎電気回路論Ⅰ及び演習 基礎電気回路論Ⅱ及び演習 工場見学 国内インターシップ 長期インターンシップ 電子デバイス工学演習 量子エレクトロニクス 領域E 半導体工学演習 領域E 半導体工学特論
主な業績等
Growth control of carbon nanotubes by plasma-enhanced chemical vapor deposition and reactive ion etching 共著 Vacuum
Optical Characterization of CuInSe2 Single Crystals Prepared by Traveling Heater Method 共著 Physica Status Solidi (c)
X-ray analysis of twist and tilt of GaN prepared by facet-controlled epitaxial lateral overgrowth 共著 2003.07 Japanese Journal of Applied Physics Part 2 Letters 42 7 732-734
Antireflection structure of self-organized GaN nanotips 共著 2003.08 Proc. 2002 Conference on Optoelectronic and Microelectronic Materials and Devices IEEE 79-82
Self-organized GaN nanotips for cold cathode application 共著 2003.08 Proceedings of 2002 Confernce on Optoelectronic and Microelectronic Materials and Devices IEEE 103-106
Improved optical properties using self-organized GaN nanotip structure 単著 2003.10 Physica Status Solidi (c) 0 7 2566-2569
High performance of Schottky detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer 共著 2003.11 Physica Status Solidi (a) 200 1 151-154
Growth of high-quality GaN on FACELO substrate by raised-pressure HVPE 共著 2003.12 Physica Status Solidi (c) 0 7 2159-2162
Spatially resolved cathodoluminescence study of selected-area ELO-GaN grown on Si(111) substrates 共著 2003.12 Physica Status Solidi (c) 0 7 2644-2649
TEM analysis of threading dislocations in crack-free AlxGa1-xN grown on an AlN(0001) template 単著 2003.12 Physica Status Solidi (c) 0 7 2444-2447
Fabrication of carbon nanotube array and its field emission property 共著 2004.05 J. Vac. Sci. Technol. B 22 22 3 1335-1337
Time-resolved nonlinear luminescence of excitonic transitions in GaN 共著 2004.07 Journal of Applied Physics American Institute of Physics 96 12 138-143
Influence of etching condition on surface morphology of AlN and GaN layers 共著 2004.09 Physica Status Solidi A Wiley-VCH 201 12 2755-2759
Freestanding GaN substrates by advanced facet-controlled epitaxial lateral overgrowth technique with masking side faces 共著 2005.01 Japanese Journal of Applied Physics Part2-Letters & Express Leters Institute of Pure and Applied Physics 44 1-7 24-26
Freestanding GaN substrates by advanced facet-controlled epitaxial lateral overgrowth technique with masking side faces 共著 2005.01 Japanese Journal of Applied Physics Part2-Letters & Express Leters Institute of Pure and Applied Physics 44 1月7日 24-26
Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy 共著 2005.04 Japanese Journal of Applied Physics The Japan Society of Applied Physics 44 17 505-507
High Quality AlGaN/AlN Superlattices grown on AlN/Sapphire Template by MOVPE 共著 2005.05 CONFERENCE SERIES NUMBER 184 COMPOUND SEMICONDUCTORS 2004 IOP Publishing 184 247-250
Fablication and characterization of UV Schottky detectors by using a freestanding GaN substrate 共著 2005.08 Mater. Res. Soc. Symp. Proc. Materials Research Society 831 E3.12 1-6
Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer 共著 2005.08 Mater. Res. Soc. Symp. Proc. Materials Research Society 831 E3.11 1-6
Influence of Si doping on the optical and structual properties of InGaN films 共著 2006.01 JOURNAL OF CRYSTAL GROWTH ELSEVIER 290 374-378
Growth characteristics of carbon nanotubes on nanotip-formed substrate 共著 2006.03 Journal of vacuum Science & Technology B American Institute of Physics 24 2 1004-1007
ファセット制御技術による高品質窒化分半導体の作製 共著 2006.04 応用物理 75 4 467-
Enhanced emission efficiency of InGaN films with Si Doping 単著 2006.06 Physica Status Solidi (c) 3 6 1944-1948
Fabrication of thick AlN film by low pressure hydride vapor phase epitaxy 共著 2006.06 Physica Status Solidi (c) Wiley-VCH 3 6 1479-1482
n-type conductivity control of AlGaN with high Al mole fraction 共著 2006.06 Physica Status Solidi (c) Wiley-VCH 3 6 1435-1438
Enhancement of blue emission from Mg-doped GaN activated at low temperature in O2/N2 mixture 共著 2006.09 Physica Status Solidi (c) Wiley-VCH 3 8 2750-2753
Influence of growth interruption and Si doping on the structural and optical properties of AlGaN/AlN (x>0.5) multiple quantum wells 共著 2007.01 Journal of Crystal Growth 298 500-503
Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model 共著 2007.02 IPSJ Transactions on Mathematical Modeling and Applications 48 SIG2(TOM16) 147-157
Dependence of In mole fraction in InGaN on GaN facets 共著 2007.05 Physica Status Solidi (c) Wiley-VCH 4 7 2383-2386
High temperature growth of AIN film by LP-HVPE 共著 2007.05 Physica Status Solidi (c) Wiley-VCH 4 7 2252-2255
Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE 共著 2007.05 Physica Status Solidi (c) Wiley-VCH 4 7 2494-2497
Synthesis of III-nitride microcrystals using metal-EDTA complexes 共著 2007.05 Physica Status Solidi (c) Wiley-VCH 4 7 2346-2349
Blue emission from InGaN/GaN hexagonal pyramid structures 共著 2007.07 Superlattices and Microstructures Elsevier 41 341-346
Supression of crack generation using high-compressive-strain AlN/Sapphire template for hydride vapor phase epitaxy of thick AlN film 共著 2007.07 Japanese Journal of Applied Physics 46 23 552-555
Optical characterization of Japanese papers for application to the LED lightning system with human sensitivity 共著 2007.11 Proc. 1st International Confernce on White LEDs and Solid State Lighting 440-443
Selective area growth of III-nitride and their application for emitting devices 共著 2007.11 Proc. 1st International Confernce on White LEDs and Solid State Lighting 72-77
Improved optical properties of AlGaN using periodic structures 共著 2008.04 Physica Status Solidi (c) WILLEY-VCH 5 6 1822-1824
Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer 共著 2008.04 Physica Status Solidi (c) WILLEY-VCH 5 6 1818-1821
Optical Characterization of Japanese Papers for Application in the LED Lighting System with Human Sensitivity 共著 2008.05 J. Light & Vis. Env. The Illuminating Engineering Institute of Japan 32 2 218-221
Selective Area Growth of Ⅲ-Nitride and Their Application for Emitting Devices 共著 2008.05 J. Light & Vis. Env. The Illuminating Engineering Institute of Japan 32 2 177-182
Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia 共著 2008.05 Physica Status Solidi (c) Wiley-VCH 5 6 1522-1524
Growth of crack-free AlGaN ons elective-area-growth GaN 共著 2008.11 Journal of Crystal Growth Elsevier 310 23 4885-4887
Reactor-pressure dependence of growthof a-plane GaN on r-plane sapphire 共著 2008.11 Journal of Crystal Growth Elsevier 310 23 4979-4982
Growth of undoped and Zn-doped GaN nanowires 共著 2009.05 Journal of Crystal Growth 311 10 2970-2972
Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template 共著 2009.05 Journal of Crystal Growth 311 10 2831-2833
Optical properties of MOVPE-grown a-plane GaN and AlGaN 共著 2009.05 Journal of Crystal Growth 311 10 2903-2905
Photoluminesence study of Si-doped a-plane GaN grown by MOVPE 共著 2009.05 Journal of Crystal Growth 311 10 2906-2909
Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE 共著 2009.05 Journal of Crystal Growth 311 10 2899-2902
Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE 共著 2009.06 Phys. Status Solidi C 6 S2 478-481
In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN 共著 2009.06 Applied Physics Letters 94 23 2311021-2311023
Effects of initial stages on the crystal quality of nonpolar a-plane AlN on 共著 2009.07 Journal of Crystal Growth 311 14 3801-3805
Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes 共著 2009.08 Applied Physics Letters 95 8 835041-835043
Fabrication of a Binary Diffractive Lens for Controlling the Luminous Intensity Distribution of LED Light 共著 2009.08 OPTICAL REVIEW 16 4 455-457
Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy 共著 2009.09 Applied Physics Letters 95 12 1219101-1219103
Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE 2009.10 Journal of Crystal Growth 311 20 4473-
Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy 共著 2009.11 Applied Physics Express 2 11 1110041-1110043
Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGan/AlN/GaN Heterojunctions 共著 2010.03 Japanese Journal of Applied Physics 49 3 377011-357014
HVPE growth of c-plane AlN on a-plane sapphire using nitridation layer 共著 2011.02 Physica Status Solidi (c) Wiley-VCH 8 2 470-472
HVPE growth of AlN on trench-patterned 6H-SiC substrates 共著 2011.02 Physica Status Solidi (c) Wiley-VCH 8 2 467-469
Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN 共著 2011.03 Applied Physics Express 4 42103 1-2
HVPE growth of thick AlN on trench-patterned substrate 共著 2011.03 Physica Status Solidi (c) Wiley-VCH 10 1002 1-4
Recombination dynamics of localized excitons in AlxGa1-xN (0.37<x<0.81) ternary alloys 共著 2011.04 Physica Status Solidi (c) Wiley-VCH 10 1002 1-3
白色LED照明システムの高輝度・高効率・長寿命化技術 共著 技術情報協会
窒化物基板および格子整合基板の成長とデバイス特性 共著 2009.10 シーエムシー出版
三重大学創造開発センター 研究報告 単著
ファセット制御技術を用いたAlGaNのエピタキシャル成長 単著


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