職名 助教
氏名 しょうじき かなこ
正直 花奈子
生年月 1988.12
所属 部局 工学研究科
学科・専攻 電気電子工学専攻
講座 電子物性工学
教育研究分野  
TEL  
FAX  
E-mail k.shojiki@elec. (末尾に mie-u.ac.jp を補ってください)
個人のホームページ  
学歴  
学位 2016.03 博士(工学) 東北大学
所属学会 応用物理学会 日本結晶成長学会
社会活動  
職歴  
学術(芸術)賞 Poster Award,第74回応用物理学会秋季学術講演会,2013.09,応用物理学会
Poster Presentation Award,2013 Annual Meeting ,2014.03,Materials Integration Center
EMS賞,第33回電子材料シンポジウム,2014.07,Electric Material Society
発表奨励賞, 第6回窒化物半導体結晶成長講演会,,2014.07,日本結晶成長学会 ナノ構造・エピタキシャル成長分科会
講演奨励賞,第75回応用物理学会秋季学術講演会 講演奨励賞,2014.11,応用物理学会
第128回金属材料研究所所内講演会 優秀ポスター賞,第128回金属材料研究所所内講演会 優秀ポスター賞,2014.11,金属材料研究所
支部講演奨励賞,第19回応用物理学会東北支部学術講演会 支部講演奨励賞,2014.12,応用物理学会東北支部学術講演会
Student's Paper Award, Student's Paper Award ,2015.04,LEDIA'15
第6回(平成27年度)日本学術振興会 育志賞,第6回(平成27年度)日本学術振興会 育志賞,2016.01,日本学術振興会
IWUMD Best Young Scientist Award,IWUMD Best Young Scientist Award,2017.11,IWUMD
研究奨励賞,日本結晶成長学会ナノエピ分科会「第11回ナノ構造・エピタキシャル成長講演会」,2019.06,日本結晶成長学会
専門分野 窒化物半導体
結晶成長
発光デバイス
現在の研究課題 窒化物半導体の結晶成長と光素子応用
担当科目  
主な業績等 Effect of Nitridation on Indium-composition of InGaN Films 共著 2012 Key Engineering Materials 508 193-198
Investigation of Indium-incorporation into InGaN by nitridation of sapphire substrate in MOVPE 共著 2012 Phys. Stat. Solidi C 10 417-420
Tilted domain and indium content of InGaN layer on m-plane GaN substrate grown by metalorganic vapor phase epitaxy 共著 2012 Jpn. J. Appl. Phys. 51 04DH01-1-04DH01-4
Effect of c-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN 共著 2014 Jpn. J. Appl. Phys. 53 05FL07-1-05FL07-4
Effect of sapphire nitridation and group-III source flow rate ratio on In-incorporation into InGaN grown by MOVPE 共著 2014 J. Nanosci. Nanotechnol. 14 6112-6115
Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar (000-1) GaN/sapphire 共著 2014 Jpn. J. Appl. Phys. 53 05FL05-1-05FL05-4
Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth 共著 2014 Jpn. J. Appl. Phys. 53 085501-1-085501-4
Red to blue wavelength emission of N-polar (000-1) InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy 共著 2015 Appl. Phys. Express 8 061005-1-061005-4
Suppression of metastable-phase inclusion in N-polar (000-1) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy 共著 2015 Appl. Phys. Lett. 106 222102-1-222102-4
Effect of Mg/Ga and V/III source ratios on hole concentration of N-polar (000-1) p-type GaN grown by metalorganic vapor phase epitaxy 共著 2016 Jpn. J. Appl. Phys. 55 05FE01-1-05FE01-4
Homogeneity improvement of N-polar (000-1) InGaN/GaN multiple quantum wells by using c-plane sapphire substrate with off-cut angle toward a-sapphire plane 共著 2016 Jpn. J. Appl. Phys. 55 05FA09-1-05FA09-8
Large Stokes-like shift in N-polar (000-1) InGaN/GaN multiple-quantum-well light-emitting diodes 共著 2016 Jpn. J. Appl. Phys. 55 05J03-1-05J03-F-4
MOVPE growth of N-polar GaN/AlxGa1?xN/GaN heterostructure on small off-cut substrate for flat interface 共著 2016 2016 Compound Semiconductor Week
Nanometer scale fabrication and optical response of InGaN/GaN quantum disks 共著 2016 Nanotechnology 27 425401-1-425401-5
Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy 共著 2016 Jpn. J. Appl. Phys. 55 05FA04-1-05FA04-5
Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations 共著 2017 Appl. Phys. Express 10 082101-1-082101-4
Fabrication of Cu2ZnSnS4 thin films using a Cu-Zn-Sn-O amorphous precursor and supercritical fluid sulfurization 共著 2017 Thin Solid Films 638 244-250
Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range 共著 2017 Physical Review B 95 125313-1-125313-8
Room-temperature blue-emitting high-beta gallium nitride nanobeam cavity lasers 共著 2017 SPIE Nanoroom
Biexciton Emission From Single Quantum-Confined Structures in N-Polar (000-1) InGaN/GaN Multiple Quantum Wells 共著 2018 Phys. Stat. Solidi B 2018 1700454-1-1700454-4
Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing 共著 2019 J. Cryst. Growth 512 131-135
Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing 共著 2019 J. Cryst. Growth 510 13-17
Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells 共著 2019 AIP Advances 9 125342-1-125342-9
Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy 共著 2019 Jpn. J. Appl. Phys. 58 SCCB17-1-SCCB17-6
Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy 共著 2019 Jpn. J. Appl. Phys. 58 SC1003-1-SC1003-5
Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film 共著 2019 J. Cryst. Growth 512 16-19
Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures 共著 2019 Appl. Phys. Express 12 065501-1-065501-4
Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer 共著 2020 J. Cryst. Growth 545 12722-1-12722-5
Dependence of the V/III Ratio on Indium Incorporation in InGaN Films Grown by Metalorganic Vapour Phase Epitaxy 共著 2020 Journal of Nanoscience and Nanotechnology 20 2979-2985
High‐Temperature Annealing of Sputter‐Deposited AlN on (001) Diamond Substrate 共著 2020 Physica Status Solidi B 257 19900447-1-19900447-5
MOVPE growth of AlN films on nano-patterned sapphire substrates with annealed sputtered AlN 共著 2020 J. Cryst. Growth 532 123597-1-123597-5
Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template 共著 2020 Appl. Phys. Lett. 116 062101-1-062101-5
Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon 共著 2020 ACS Photonics 7 1515-1522