職名 教授
氏名 みやけひでと
三宅 秀人
生年月 1963.10
所属 部局 地域イノベーション学研究科
学科・専攻 工学イノベーションユニット
講座  
教育研究分野  
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E-mail miyake@elec. (末尾に mie-u.ac.jp を補ってください)
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学歴 山梨大学工学部 学士課程 (~1986年)
大阪大学大学院 基礎工学研究科 物理系専攻 修士課程・博士前期課程 (~1988年) 卒業・修了
学位 https://researchmap.jp/mie-opt

1994.04 博士(工学) 大阪大学
所属学会 応用物理学会 多元系機能性材料研究会 Material Reseach Society 応用物理学会 結晶工学分科会 応用物理学会 応用電子物性研究会
社会活動  
職歴 1988.04~1997.03 三重大学工学部  文部教官 助手
1997.04~2007.03 三重大学工学部  文部科学教官 助教授
2007.04~ 三重大学工学部  文部科学教員 准教授
学術(芸術)賞 応用物理学会賞 B(奨励賞)
日本MRSシンポジウム 奨励賞
感謝状,日本技術者認定機構,電気学会
APEX/JJAP貢献賞,応用物理学会 欧文雑誌 APEX/JJAPの論文査読と編集についての業績,応用物理学会
応用物理学会 講演奨励賞,窒化物半導体に関する一連の研究,応用物理学会
電子情報通信学会電子デバイス研究会論文発表奨励賞,窒化物半導体に関する一連の研究,電子情報通信学会電子デバイス研究会
応用物理学会結晶工学分科会2011年年末講演会発表奨励賞,窒化物半導体に関する一連の研究,応用物理学会結晶工学分科会
日本結晶成長学会ナノ構造・エピタキシャル成長分科会発表奨励賞,窒化物半導体の結晶成長に関する一連の研究,日本結晶成長学会ナノ構造・エピタキシャル成長分科会
ISPlasma2012 Best Presentation Award,窒化物半導体の結晶成長に関する一連の研究,ISPlasma 実行委員会
感謝状,応用物理学会 結晶工学分科会 幹事長としての職責,応用物理学会
最優秀授業賞,三重大学大学院工学研究科 研究科長
ISPlasma2015 Best Presentation Award,窒化物半導体の結晶成長に関する一連の研究,ISPlasma 実行委員会
優秀授業賞,基礎電気回路論Ⅰ及び演習,2015.01,三重大学大学院工学研究科 電気電子工学専攻
三重大学 知的財産最優秀出願賞,窒化アルミニウム(AlN)膜を有する基板および窒化アルミニウム(AlN)膜の製造方法,2015.09,三重大学
三重大学 知的財産優秀出願賞,窒化アルミニウム(AlN)膜を有する基板および窒化アルミニウム(AlN)膜の製造方法,2015.09,三重大学
日本結晶成長学会 技術賞,サファイア上への高品質窒化アルミニウム成長技術,2015.10,日本結晶成長学会
三重大学 知的財産最優秀出願賞,窒化アルミニウム(AlN)膜を有する基板および窒化アルミニウム(AlN)膜の製造方法,2017.11,三重大学
専門分野 半導体工学 化合物半導体の結晶成長
現在の研究課題 窒化物半導体のナノ構造制御
担当科目 基礎電気回路論Ⅰ及び演習 基礎電気回路論Ⅱ及び演習 光・電気物理学特論 光エレクトロニクス 材料科学 電子デバイス工学演習 半導体工学演習
主な業績等 https://researchmap.jp/mie-opt

A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction Al x Ga1− x N multiple quantum wells: 共著 2016 Applied Physics Express 10 15802-
Detecting High-refractive-index Media using Surface Plasmon Sensor with Onedimensional Metal Diffraction Grating: 共著 2016 Optics and Photonics Journal 6 164 -
Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN: 共著 2016 Japanese Journal of Applied Physics 55 05FA02-
Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates: 共著 2016 Applied Physics Express 9 81001-
Electron microscopy analysis of microstructure of postannealed aluminum nitride template: 共著 2016 Applied Physics Express 9 65502-
Excitation and deexcitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states: 共著 2016 Journal of Physics D: Applied Physics 49 245102 -
Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle: 共著 2016 Japanese Journal of Applied Physics 55 05 FL02 -
Impacts of Dislocations and Point Defects on the Internal Quantum Efficiency of the Near-Band-Edge Emission in AlGaN-Based DUV Light-Emitting Materials 共著 2016 III-Nitride Ultraviolet Emitters 115-136
Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations: 共著 2016 Journal of Applied Physics 119 25707 -
Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique: 2016 Applied Physics Express 9 111001-
Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing: 共著 2016 Journal of Crystal Growth 456 155 -159
Reduction of dislocation density of aluminium nitride buffer layer grown on sapphire substrate 共著 2016.06 Journal of Mechanical Engineering and Sciences 10 1908-1916
Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells 共著 2017 Applied Physics Express 10(5) 051003-
Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells: 共著 2017 Applied Physics Express 10 51003-
Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy 共著 2017 Japanese Journal of Applied Physics 57(1S) 01AD05-
Excitation mechanism of surface plasmon polaritons in a double-layer wire grid structure 共著 2017 Applied Physics A 123(12) 729-
Fabrication and characterization of a binary diffractive lens for controlling the focal length and depth of focus 共著 2017 Microoptics Conference (MOC) 22 276-277
Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions 共著 2017 Journal of Crystal Growth 468 845-850
Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions: 共著 2017 Journal of Crystal Growth
High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes 共著 2017 AIP Advances 7(5) 055110-
High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes: 共著 2017 AIP Advances 7 55110 -
High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0. 60Ga0. 40N/Al0. 70Ga0. 30N multiple quantum wells 共著 2017 Applied Physics Express 10(2) 021002-
High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0. 60Ga0. 40N/Al0. 70Ga0. 30N multiple quantum wells: 共著 2017 Applied Physics Express 10 21002-
Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates 共著 2017 Journal of Crystal Growth 468 851-855
Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates: 共著 2017 Journal of Crystal Growth
Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns 共著 2017 Japanese Journal of Applied Physics 56(12) 125504-
Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction 共著 2017 Japanese Journal of Applied Physics 56(2) 025502-
Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction: 共著 2017 Japanese Journal of Applied Physics 56 25502-
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire 共著 2018 Applied Physics Letters 112(4) 41110-
Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells 共著 2018 Japanese Journal of Applied Physics 57(6) 60311-
Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere 共著 2018 Gallium Nitride Materials and Devices XIII 10532 1053204-
Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing 共著 2018 physica status solidi (b) 255(5) 1700506-
Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering 共著 2018 APL Materials 6(11) 111103-
High-temperature annealing of AlN on sapphire using face-to-face method (Conference Presentation) 共著 2018 Gallium Nitride Materials and Devices XIII 10532 1053202-
Improvement mechanism of sputtered AlN films by high-temperature annealing 共著 2018 Journal of Crystal Growth 502 41-44
Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction 共著 2018 Journal of Applied Physics 123(16) 161563-
Polarity inversion of aluminum nitride by direct wafer bonding 共著 2018 Applied Physics Express 11(3) 31003-
Temperature dependence of excitonic transitions in Al0. 60Ga0. 40N/Al0. 70Ga0. 30N multiple quantum wells from 4 to 750 K 共著 2018 Journal of Applied Physics 123(20) 205705-
Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0. 61Ga0. 39N Epitaxial Layer 共著 2018 physica status solidi (b) 255(5) 1700374-
Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing 共著 2019 Journal of Crystal Growth 512 131-135
Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt 共著 2019 Advanced Optical Materials 7 1801763-
Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing 共著 2019 Journal of Crystal Growth 510 13-17
Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells 共著 2019 AIP Advances 9 125342-
Improved emission intensity of UVC-LEDs from using strain relaxation layer on sputter-annealed AlN 共著 2019 Japanese Journal of Applied Physics 58 SCCC07-
Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing 共著 2019 Scientific reports 9 1-8
Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy 共著 2019 Japanese Journal of Applied Physics 58 SCCB17-
Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy 共著 2019 Japanese Journal of Applied Physics 58 SC1003-
Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film 共著 2019 Journal of Crystal Growth 512 16-19
Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures 共著 2019 Applied Physics Express 12 65501-
Statistics of excitonic energy states based on phononic-excitonic-radiative model 共著 2019 Japanese Journal of Applied Physics 58 SCCB34-
Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures 共著 2019 Japanese Journal of Applied Physics 58 SCCB30-
Ultraviolet-B band lasers fabricated on highly relaxed thick Al0. 55Ga0. 45N films grown on various types of AlN wafers 共著 2019 Japanese Journal of Applied Physics 58 SC1052-
High‐Temperature Annealing of Sputter‐Deposited AlN on (001) Diamond Substrate 共著 2020.02 physica status solidi (b) 257,2 1900447-
Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers 共著 2020.03 Applied Physics Express 13 045504-
Antireflection structure of self-organized GaN nanotips 共著 2003.08 Proc. 2002 Conference on Optoelectronic and Microelectronic Materials and Devices 79-82
AlN nanostructures and flat, void-less AlN templates formed by hydride vapor phase epitaxy on patterned sapphire substrates 共著 2019 Applied Physics Express 13 25506-
High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing 共著 2020.02 physica status solidi (a)
MOVPE growth of AlN films on nano-patterned sapphire substrates with annealed sputtered AlN 共著 2020.02 Journal of Crystal Growth 532 125397-
Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire 共著 2020.02 Applied Physics Express 13
Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template 共著 2020.02 Applied Physics Letters 116 62101-
Growth of high-quality GaN on FACELO substrate by raised-pressure HVPE 共著 2003.12 Physica Status Solidi (c) 0 2159-2162
High performance of Schottky detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer 共著 2003.11 Physica Status Solidi (a) 200 151-154
Improved optical properties using self-organized GaN nanotip structure 共著 2003.10 Physica Status Solidi (c) 0 2566-2569
Self-organized GaN nanotips for cold cathode application 共著 2003.08 Proceedings of 2002 Confernce on Optoelectronic and Microelectronic Materials and Devices 103-106
Spatially resolved cathodoluminescence study of selected-area ELO-GaN grown on Si(111) substrates 2003.12 Physica Status Solidi (c) 0 2644-2649
TEM analysis of threading dislocations in crack-free AlxGa1-xN grown on an AlN(0001) template 共著 2003.12 Physica Status Solidi (c) 0 2444-2447
X-ray analysis of twist and tilt of GaN prepared by facet-controlled epitaxial lateral overgrowth 共著 2003.07 Japanese Journal of Applied Physics Part 2 Letters 42 732-734
Fabrication of carbon nanotube array and its field emission property 共著 2004.05 J. Vac. Sci. Technol. B 22 22 1335-1337
Influence of etching condition on surface morphology of AlN and GaN layers 共著 2004.09 Physica Status Solidi A 201 2755-2759
Time-resolved nonlinear luminescence of excitonic transitions in GaN 共著 2004.07 Journal of Applied Physics 96 138-143
Fablication and characterization of UV Schottky detectors by using a freestanding GaN substrate 共著 2005.08 Mater. Res. Soc. Symp. Proc. 831 1-6
Freestanding GaN substrates by advanced facet-controlled epitaxial lateral overgrowth technique with masking side faces 共著 2005.01 Japanese Journal of Applied Physics Part2-Letters & Express Leters 44 24-26
Freestanding GaN substrates by advanced facet-controlled epitaxial lateral overgrowth technique with masking side faces 共著 2005.01 Japanese Journal of Applied Physics Part2-Letters & Express Leters 44 24-26
Growth characteristics of carbon nanotubes on nanotip-formed substrate 共著 2006.03 Journal of vacuum Science & Technology B 24 1004-1007
Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy 共著 2005.04 Japanese Journal of Applied Physics 44 505-507
High Quality AlGaN/AlN Superlattices grown on AlN/Sapphire Template by MOVPE 共著 2005.05 CONFERENCE SERIES NUMBER 184 COMPOUND SEMICONDUCTORS 2004 247-250
Influence of Si doping on the optical and structual properties of InGaN films 共著 2006.01 JOURNAL OF CRYSTAL GROWTH 374-378
Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer 共著 2005.08 Mater. Res. Soc. Symp. Proc. 831 1-6
Enhanced emission efficiency of InGaN films with Si Doping 単著 2006.06 Physica Status Solidi (c) 3 1944-1948
Enhancement of blue emission from Mg-doped GaN activated at low temperature in O2/N2 mixture 共著 2006.09 Physica Status Solidi (c) 3 2750-2753
Fabrication of thick AlN film by low pressure hydride vapor phase epitaxy 共著 2006.06 Physica Status Solidi (c) 3 1479-1482
Growth control of carbon nanotubes by plasma-enhanced chemical vapor deposition and reactive ion etching 共著 Vacuum
Influence of growth interruption and Si doping on the structural and optical properties of AlGaN/AlN (x>0.5) multiple quantum wells 共著 2007.01 Journal of Crystal Growth 298 500-503
n-type conductivity control of AlGaN with high Al mole fraction 共著 2006.06 Physica Status Solidi (c) 3 1435-1438
Optical Characterization of CuInSe2 Single Crystals Prepared by Traveling Heater Method 共著 Physica Status Solidi (c)
Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model 共著 2007.02 IPSJ Transactions on Mathematical Modeling and Applications 48 147-157
ファセット制御技術による高品質窒化分半導体の作製 共著 2006.04 応用物理 75 467-
Blue emission from InGaN/GaN hexagonal pyramid structures 共著 2007.07 Superlattices and Microstructures 41 341-346
Dependence of In mole fraction in InGaN on GaN facets 共著 2007.05 Physica Status Solidi (c) 4 2383-2386
High temperature growth of AIN film by LP-HVPE 共著 2007.05 Physica Status Solidi (c) 4 2252-2255
Optical characterization of Japanese papers for application to the LED lightning system with human sensitivity 共著 2007.11 Proc. 1st International Confernce on White LEDs and Solid State Lighting 440-443
Selective area growth of III-nitride and their application for emitting devices 共著 2007.11 Proc. 1st International Confernce on White LEDs and Solid State Lighting 72-77
Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE 共著 2007.05 Physica Status Solidi (c) 4 2494-2497
Supression of crack generation using high-compressive-strain AlN/Sapphire template for hydride vapor phase epitaxy of thick AlN film 共著 2007.07 Japanese Journal of Applied Physics 46 552-555
Synthesis of III-nitride microcrystals using metal-EDTA complexes 共著 2007.05 Physica Status Solidi (c) 4 2346-2349
Growth of crack-free AlGaN ons elective-area-growth GaN 共著 2008.11 Journal of Crystal Growth 310 4885-4887
Improved optical properties of AlGaN using periodic structures 共著 2008.04 Physica Status Solidi (c) 5 1822-1824
Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer 共著 2008.04 Physica Status Solidi (c) 5 1818-1821
Optical Characterization of Japanese Papers for Application in the LED Lighting System with Human Sensitivity 共著 2008.05 J. Light & Vis. Env. 32 218-221
Reactor-pressure dependence of growthof a-plane GaN on r-plane sapphire 共著 2008.11 Journal of Crystal Growth 310 4979-4982
Selective Area Growth of Ⅲ-Nitride and Their Application for Emitting Devices 共著 2008.05 J. Light & Vis. Env. 32 177-182
Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia 共著 2008.05 Physica Status Solidi (c) 5 1522-1524
Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes 共著 2009.08 Applied Physics Letters 95 835041-835043
Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE 共著 2009.06 Phys. Status Solidi C 6 478-481
Effects of initial stages on the crystal quality of nonpolar a-plane AlN on 共著 2009.07 Journal of Crystal Growth 311 3801-3805
Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy 共著 2009.11 Applied Physics Express 2 1110041-1110043
Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGan/AlN/GaN Heterojunctions 共著 2010.03 Japanese Journal of Applied Physics 49 377011-357014
Fabrication of a Binary Diffractive Lens for Controlling the Luminous Intensity Distribution of LED Light 共著 2009.08 OPTICAL REVIEW 16 455-457
Growth of undoped and Zn-doped GaN nanowires 共著 2009.05 Journal of Crystal Growth 311 2970-2972
Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE 2009.10 Journal of Crystal Growth 311 4473-
In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN 共著 2009.06 Applied Physics Letters 94 2311021-2311023
In-plane structural anisotropy and polarized Raman-active mode studies of nonpolar AlN grown on 6H-SiC by low-pressure hydride vapor phase epitaxy 共著 2010.02 Journal of Crystal Growth 312 490-494
Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template 共著 2009.05 Journal of Crystal Growth 311 2831-2833
Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy 共著 2009.09 Applied Physics Letters 95 1219101-1219103
Optical properties of MOVPE-grown a-plane GaN and AlGaN 共著 2009.05 Journal of Crystal Growth 311 2903-2905
Photoluminesence study of Si-doped a-plane GaN grown by MOVPE 共著 2009.05 Journal of Crystal Growth 311 2906-2909
Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE 共著 2009.05 Journal of Crystal Growth 311 2899-2902
Variation of Surface Potentials Si-Doped AlxGa1-xN(0<x<0.87)Grown on AlN/Sapphire Template by Metal-Organic Vapor Phase Epitaxy 共著 2010.02 Applied Physics Express 3 21004-21004
Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal-Organic Vapor Phase Epitaxy 共著 2010.10 Japanese Journal of Applied Physics 49 101001-101001
Enhanced deep ultraviolet emission from Si-doped AlxGa1_xN/AlN MQWs? 共著 2010.12 Chin.Phys.B Vol.19 127801-2972
Fabrication and characterization of binary diffractive lens with the 100 μm-order-focal length 共著 2010.10 Technical Digest of the 16th Microoptics Conference 209-210
Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN 共著 2011.03 Applied Physics Express 4 1-2
Facet control in selective area growth (SAG) of a-plane GaN by MOVPE 共著 2010.06 Mater. Res. Soc. Symp. Proc. 1202 120205121-120205125
Growth of high quality c-plane AlN on a-plane sapphire 共著 2010.06 Mater. Res. Soc. Symp. Proc. 1202 120205021-120205025
Huge binding energy of localized biexcitons in Al-rich AlxGa1?xN 共著 2011.02 Applied Physics Letters 98 1-3
HVPE growth of AlN on trench-patterned 6H-SiC substrates 共著 2011.02 Physica Status Solidi (c) 8 467-469
HVPE growth of c-plane AlN on a-plane sapphire using nitridation layer 共著 2011.02 Physica Status Solidi (c) 8 470-472
HVPE growth of thick AlN on trench-patterned substrate 共著 2011.03 Physica Status Solidi (c) 10 1-4
Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films 共著 2011.02 Applied Physics Express 4 1-3
Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen 共著 2010.04 Japanese Journal of Applied Physics 49 41001-41001
Control of AlN buffer/sapphire substrate interface for AlN growth 共著 2011.06 Phys. Status Solidi (c) 10 1-3
Determination of Al molar fraction in AlxGa1-xN films by Raman scattering 共著 2011.08 Journal of Applied Physics 110 335111-335114
Effects of carrier gas ratio and growth temperature on MOVPE growth of AlN 共著 2012.03 Physica Status Solidi (c) 9 499-502
Evidence for moving of threading dislocations during the VPE growth in GaN thin layers 共著 2011.05 Physica Status Solidi (c) 8 1487-1490
Fabrication of crack-free thick AlN film on a-plane sapphire by low pressure HVPE 共著 2012.03 Physica Status Solidi (c) 9 576-579
Microstructure of AlN grown on a nucleation layer on a sapphire substrate 共著 2012.02 Applied Physics Express 5 255011-255013
Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films 共著 2011.12 Applied Physics Letters 99 2519041-2519043
Recombination dynamics of localized excitons in AlxGa1-xN (0.37<x<0.81) ternary alloys 共著 2011.04 Physica Status Solidi (c) 10 1-3
Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer 共著 2012.03 Physica Status Solidi (c) 9 550-553
Stress analysis of a-plane GaN grown on r-plane sapphire substrates 共著 2011.06 Phys. Status Solidi (c) 10 1-3
AlN homo epitaxial growth on sublimation-AlNsubstrate by low-pressure HVPE 共著 2012.07 Journal of Crystal Growth 350 69-71
Correlation between in-plane strain and optical and optical polarization of Si-doped AlGaN epitaxial layers as a function of Al content and Si concentration 共著 2012.08 Journal of Applied Physics 112 033512-1-033512-5
Effects of Si in high-quality AlN grown by MOVPE on trench-patterned template 共著 2013.03 Journal of Crystal Growth 370 74-77
Fabrication of Binary Diffractive Lenses and the Application to LED Lighting for Controlling Luminosity Distribution 共著 2013.03 Optics and Photonics Journal 3 67-73
Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources 共著 2013.01 Japanese Journal of Applied Physics 52 01AF03-1-01AF03-3
Impacts of Si-doping and resultant cation vacancy formation:on the luminescence dynamics for the near-band-edge emission:of Al0.6Ga0.4N films grown on AlN templates by metalorganic:vapor phase epitaxy 共著 2013.06 Journal of Applied Physics 113 213506-1-213506-6
Interaction of the dual effects triggered by AlN interlayers in thick GaN grown on 3C-SiC/Si substrates 共著 2012.09 Journal of Physics D: Applied Physics 38 385101-1-385101-4
Photoluminescence due to Inelastic Biexcitation Scattering from an Al0.61Ga0.39N Ternary Alloy Epitaxial Layer at Room Temperature 共著 2012.07 Applied Physics Express 5 072401-1-072401-3
Study on the effects of AlN interlayer in thick GaN grown on 3C-SiC/Si substrates 共著 2013.03 Journal of Crystal Growth 370 254-258
AlN Grown on a- and n-Plane Sapphire Substrates:by Low-Pressure Hydride Vapor Phase Epitaxy 共著 2013.08 Journal of Applied Physics 52 08JB31-1-08JB31-4
Anisotropic crystalline morphology of:epitaxial thick AlN films grown on:triangular-striped AlN/sapphire:template 共著 2013.02 Phys. Status Solidi (a) 1-5
Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers:Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy 共著 2013.05 Journal of Applied Physics 52 08JL07-1-08JL07-4
Cross-sectionalX-raymicrodiffractionstudyofathickAlN film grown:on atrench-patternedAlN/α-Al2O3 template 共著 2013.07 Journal ofCrystalGrowth 381 37-42
Inhomogeneous distribution of defect-related emission in Si-doped AlGaN:epitaxial layers with different Al content and Si concentration 共著 2014.02 Journal of Applied Physics 115 053509-1-053509-6
Properties of GaN grown on Si(111) substrates dependent on the thickness:of 3C-SiC intermediate layers 共著 2014.02 Journal of Applied Physics 115 063102-1-063102-5
Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates 共著 2013.05 Journal of Applied Physics 52 08JB07-1-08JB07-5
Selective Area Growth of Semipolar (2021) and (2021) GaN Substrates by Metalorganic Vapor Phase Epitaxy 2013.05 Journal of Applied Physics 52 08JC06-1-08JC06-4
Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template 共著 2014.04 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 211 731-735
Crack- free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer 共著 2014.04 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 211 744-747
Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template (vol 381, pg 37, 2013) 共著 2014.02 JOURNAL OF CRYSTAL GROWTH 388 150-150
High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy 共著 2014.05 JAPANESE JOURNAL OF APPLIED PHYSICS 53 05FL03-
Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration 共著 2014.02 JOURNAL OF APPLIED PHYSICS 115 53509-
MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer 共著 2014.05 JAPANESE JOURNAL OF APPLIED PHYSICS 53 05FL09-
Properties of GaN grown on Si(111) substrates dependent on the thickness of 3C-SiC intermediate layers 共著 2014.02 JOURNAL OF APPLIED PHYSICS 115 63102-
Properties of GaN grown on Si(111) substrates dependent on the thickness:of 3C-SiC intermediate layers 共著 2014.02 Journal of Applied Physics 115 063102-1-063102-5
Selective-area growth of GaN on non- and semi-polar bulk GaN substrates 共著 2014.05 JAPANESE JOURNAL OF APPLIED PHYSICS 53 05FL04-
Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structures 共著 2014.04 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 211 765-768
Binding energy of localized biexcitons in AlGaN-based quantum wells: 共著 2014.12 APPLIED PHYSICS EXPRESS 122101
Growth of AlN Crystals on SiC Substrates by Thermal Nitridation of Al2O3: 共著 2014.12 JOURNAL OF THE AMERICAN CERAMIC SOCIETY 3781-3786
Vacuum ultraviolet ellipsometer using inclined detector as analyzer to measure stokes parameters and optical constants - With results for AlN optical constants: 共著 2014.11 THIN SOLID FILMS 517-521
Preface: 共著 2014.10 JOURNAL OF CRYSTAL GROWTH 1-2
MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer: 共著 2014.03 JAPANESE JOURNAL OF APPLIED PHYSICS 05FL09
High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy: 共著 2014.05 JAPANESE JOURNAL OF APPLIED PHYSICS 05FL03
Selective-area growth of GaN on non- and semi-polar bulk GaN substrates: 共著 2014.05 JAPANESE JOURNAL OF APPLIED PHYSICS 05FL04
Thermo-physical properties of Cu2ZnSnS4 single crystal: 共著 2014.05 JOURNAL OF CRYSTAL GROWTH 167-170
Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal: 2014.04 APPLIED PHYSICS LETTERS 152101
Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template: 2014.04 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 731-735
Crack- free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer: 共著 2014.04 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 744-747
Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structures: 共著 2014.04 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 765-768
Properties of GaN grown on Si(111) substrates dependent on the thickness of 3C-SiC intermediate layers: 共著 2014.02 JOURNAL OF APPLIED PHYSICS 63102
Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration: 共著 2014.02 JOURNAL OF APPLIED PHYSICS 53509
Growth and characterization of Cu2ZnSn(SxSe1-x)(4) alloys grown by the melting method: 共著 2014.01 JOURNAL OF CRYSTAL GROWTH 204-207
Annealing of an AlN buffer layer in N-2-CO for growth of a high-quality AlN film on sapphire: 共著 2016.02 APPLIED PHYSICS EXPRESS 25501
Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations: 共著 2016.01 JOURNAL OF APPLIED PHYSICS 25707
Surface thermal stability of free-standing GaN substrates: 共著 2015.01 JAPANESE JOURNAL OF APPLIED PHYSICS 01AC08
Formosa haliotis sp nov., a brown-alga-degrading bacterium isolated from the gut of the abalone Haliotis gigantea: 共著 2015 INTERNATIONAL JOURNAL OF SYSTEMATIC AND EVOLUTIONARY MICROBIOLOGY 4388-4393
Extraordinary Optical Transmission Exhibited by Surface Plasmon Polaritons in a Double-Layer Wire Grid Polarizer: 共著 2015.12 PLASMONICS 1657-1662
Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1-xN multiple quantum wells grown by metalorganic vapor phase epitaxy: 共著 2015.09 APPLIED PHYSICS LETTERS 121602
Growth and characterization of Cu2ZnSn(SxSe1-x)(4) single crystal grown by traveling heater method: 共著 2015.08 JOURNAL OF CRYSTAL GROWTH 9-15
Solution growth of chalcopyrite compounds single crystal: 共著 2015.07 RENEWABLE ENERGY 127-130
Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN: 共著 2015.06 APPLIED PHYSICS EXPRESS 65601
Excitation-dependent carrier dynamics in Al-rich AlGaN layers and multiple quantum wells: 共著 2015.05 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 1043-1049
Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media: 共著 2015.04 OPTICS COMMUNICATIONS 64-68
Recent Advances in White LEDs and Solid-State Lighting FOREWORD: 共著 2015.02 JAPANESE JOURNAL OF APPLIED PHYSICS 02B001
Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template: 共著 2015.02 JOURNAL OF CRYSTAL GROWTH 38-44
白色LED照明システムの高輝度・高効率・長寿命化技術 共著 技術情報協会
窒化物基板および格子整合基板の成長とデバイス特性 共著 2009.10 シーエムシー出版
三重大学創造開発センター 研究報告 単著
ファセット制御技術を用いたAlGaNのエピタキシャル成長 単著