| 教員紹介トップページへ | 三重大学トップページへ |
| 職名 | 助教 | ||||||||||||||||
| 氏名 | かわむら たかひろ 河村 貴宏 |
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| 生年月 | 1979.06 | ||||||||||||||||
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| TEL | 059-231-9364 | ||||||||||||||||
| FAX | |||||||||||||||||
| tkawamura@mach. (末尾に mie-u.ac.jp を補ってください) | |||||||||||||||||
| ｒｅｓｅａｒｃｈｍａｐ | https://researchmap.jp/md_simulation/?lang=japanese | ||||||||||||||||
| 三重大学全学SEEDS集 | https://seeds.mie-u.ac.jp/seeds/1008.html | ||||||||||||||||
| 個人のホームページ | |||||||||||||||||
| 学歴 | 九州大学工学部機械航空工学科 学士課程 (1999年04月～2003年03月) 卒業・修了
九州大学大学院工学府航空宇宙工学専攻 修士課程・博士前期課程 (2003年04月～2005年03月) 卒業・修了 九州大学大学院工学府航空宇宙工学専攻 博士課程・博士後期課程 (2005年04月～2008年03月) 卒業・修了 |
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| 学位 | 2008.03 博士（工学） 九州大学
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| 所属学会 | 応用物理学会 日本結晶成長学会 日本金属学会 | ||||||||||||||||
| 社会活動 | |||||||||||||||||
| 職歴 | 2008.04～2010.03 大阪大学大学院工学研究科 特任研究員
2010.04～ 三重大学大学院工学研究科機械工学専攻 助教 2025.11～ 三重大学大学院工学研究科電子情報工学専攻 准教授 |
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| 学術（芸術）賞 | 日本結晶成長学会講演奨励賞,日本結晶成長学会
貢献賞,貢献賞,2024.11,日本結晶成長学会 貢献賞,2025.07,日本結晶成長学会 ナノ構造・エピタキシャル成長分科会 |
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| 専門分野 | 結晶工学 結晶成長学 固体物理学 | ||||||||||||||||
| 現在の研究課題 | ワイドギャップ半導体の結晶成長シミュレーション及び物性解析 | ||||||||||||||||
| 担当科目 | 機械工学フレッシュマンゼミナール 機械工学実験及び実習I 機械工学実験及び実習II 専門英語 物理学実験 | ||||||||||||||||
| 主な業績等 | Characterization of CsLiB6O10 Crystal Grown in a Dry Atmosphere 共著 2010.07 Japanese Journal of Applied Physics 49 65502-
Investigation of GaN Solution Growth Processes on Ga- and N-Faces by Molecular Dynamics Simulation 共著 2012.01 Japanease Journal of Applied Physics 51 Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth 共著 2012.04 Journal of Crystal Growth 351 32-36 Structural Analysis of Carbon-Added Na-Ga Melts in Na Flux GaN Growth by First-Principles Calculation 共著 2013 Japanese Journal of Applied Physics Molecular beam epitaxy growth of GaN under Ga-rich conditions investigated by molecular dynamics simulation 共著 2014.04 Japanese Journal of Applied Physics 53 05FL08- Molecular dynamics simulation of graphene growth by surface decomposition of 6H-SiC(0001) and (000-1) 共著 2014.05 Japanese Journal of Applied Physics 53 065601- First-principles investigation of GaN growth process in carbon-added Na-flux method 共著 2015.05 Physica Status Solidi B 252 1084-1088 分子動力学法を用いたTiAl系金属間化合物における転位挙動の解析 共著 2015.08 日本金属学会誌 79 413-418 Mechanism for enhanced single-crystal GaN growth in the C-assisted Na-flux method 共著 2015.12 Applied Physics Express 9 015601-1-015601-4 Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics 共著 2016.01 Japanese Journal of Applied Physics 55 031301- First-principles study of the surface phase diagrams of GaN(0001) and (000-1) under oxide vapor phase epitaxy growth conditions 共著 2017.03 Physica Status Solidi B 254 1600706-1-1600706-6 First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth 共著 2018.10 Japanese Journal of Applied Physics 57 115504-1-115504-7 First-Principles Calculation of Bandgaps of Al1-xInxN Alloys and Short-Period Al1-xInxN/Al1-yInyN Superlattices 共著 2019.10 Physica Status Solidi B 257 1900530-1-1900530-5 Absolute surface energies of oxygen-adsorbed GaN surfaces 共著 2020.09 Journal of Crystal Growth 549 125868-1-125868-7 Activation free energies for formation and dissociation of N–N, C–C, and C–H bonds in a Na–Ga melt 共著 2021.04 Computational Material Science 194 110366-1-10366-9 Bandgap engineering of α-Ga2O3 by hydrostatic, uniaxial, and equibiaxial strain 共著 2022.01 Japanese Journal of Applied Physics 61 021005-1-021005-8 Influence of oxygen-related defects on the electronic structure of GaN 共著 2022.06 Japanese Journal of Applied Physics 61巻6号 Bandgap Change in Short-Period InN/AlN Superlattices Induced by Lattice Strain 共著 2023.02 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Effect of lattice constraint on structural stability and miscibility of (AlxGa1-x)2O3 films: a first-principles study 共著 2023.04 Japanese Journal of Applied Physics 62 SC1031- OVPE成長条件下におけるGaN表面構造と点欠陥がGaNの光学特性へ与える影響 共著 2023.04 日本結晶成長学会誌 50巻1号 02-1-02-8 First-principles calculations of α-Ga2O3 /Al2O3 superlattice band structures 共著 2024.01 Journal of Crystal Growth 626巻 127477-127477 Ab initio study for adsorption behavior on AlN(0001) surface with steps and kinks during metal-organic vapor-phase epitaxy 共著 2024.02 Japanese Journal of Applied Physics 63 02SP71- Temperature dependence of liquid-gallium ordering on the surface of epitaxially grown GaN 共著 2024.02 Applied Physics Express 17 025502- An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces 共著 2024.04 physica status solidi (b) 261 2300573- Structural Stability of Vicinal AlN(0001) and GaN(0001) Surfaces with Steps and Kinks under Metal?Organic Vapor-Phase Epitaxy Condition: A First-Principles Study 共著 2024.07 Crystal Growth & Design 24 5906-5915 Influence of Intrinsic Point Defects Incorporated from Growth:Surface on Atomic Interdiffusion and Unintentional Compositional:Gradient in AlGaN/AlN Heterointerfaces 共著 2025.01 Crystal Growth & Design 25 740-746 Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics 共著 2025.01 physica status solidi (a) 2400896- Theoretical study on structural stability and miscibility of ScAlN alloys: effect of lattice constraint 共著 2025.01 Japanese Journal of Applied Physics 64 01SP03- Thermal conductivity of GaN with a vacancy and an oxygen point defect 共著 2025.01 Journal of Crystal Growth 649巻 127948- Computational Study for Structures and Electronic Properties of (RhAl)2O3 and (RhGa)2O3 Alloys for Optimal p‐Type Heterostructures in Group‐III Sesquioxides 共著 2025.03 physica status solidi (b) 2400672- Effects of Sc Composition and Lattice Constraint on Polarization Switching of ScxAl1-xN Alloys: A First‐Principles Study 共著 2025.03 physica status solidi (b) 2400647- Effect of water impurity in CsLiB6O10 crystals on bulk laser-induced damage threshold and transmittance in the ultraviolet region 共著 2009.03 Applied Optics 48 1658-1662 Crystal growth of CsLiB6O10 in a dry atmosphere and from a stoichiometric melt composition 共著 2010 Journal of Crystal Growth 312 1118-1121 Investigation of thermal conductivity of a fullerene peapod by molecular dynamics simulation 共著 2007.11 Journal of Crystal Growth 310 2301-2305 Thermal conductivity of SiC calculated by molecular dynamics 共著 2008.12 Japanese Journal of Applied Physics 47 8898-8901 An investigation of thermal conductivity of nitride-semiconductor nanostructures by molecular dynamics simulation 共著 2007.11 Journal of Crystal Growth 298 251-253 Molecular dynamics simulation of thermal conductivity of GaN/AlN quantum dot superlattices 共著 2007.05 Physical Status Solidi (c) 4 2289-2292 Investigation of thermal conductivity of nitride mixed crystals and superlattices by molecular dynamics 共著 2006.05 Physical Status Solidi (c) 3 1695-1699 Investigation of thermal conductivity of GaN by molecular dynamics 共著 2005.08 Journal of Crystal Growth 284 197-202 Handbook of Crystal Growth, 2nd Edition, Bulk Crystal Growth 共著 2014.12 Elsevier |
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