職名 助教
氏名 うえすぎ けんじろう
上杉 謙次郎
生年月 1988.12
所属 部局 みえの未来図共創機構
学科・専攻 産学官連携推進部門
講座  
教育研究分野  
TEL 059-231-6995
FAX 059-231-9905
E-mail k.uesugi@opri. (末尾に mie-u.ac.jp を補ってください)
個人のホームページ https://researchmap.jp/uesugikenjiro
学歴 2011.03 東京大学工学部 物理工学科 卒業
2013.03 東京大学大学院新領域創成科学研究科 物質系専攻 修了
学位 2013.03 修士 (科学) 東京大学
2019.09 博士 (学術) 三重大学
所属学会 応用物理学会
日本結晶成長学会
社会活動  
職歴 2013.04 ~ 2017.12 株式会社東芝 研究開発センター 電子デバイスラボラトリー
2018.01 ~ 2018.06 三重大学 地域イノベーション推進機構 地域戦略センター 研究員
2018.07 ~ 2019.08 三重大学 地域創生戦略企画室 研究員
2019.09 ~ 2022.03 三重大学 地域創生戦略企画室 助教
2019.09 ~ 三重大学大学院 地域イノベーション学研究科 助教
2022.04 ~ 三重大学 みえの未来図共創機構 助教
学術(芸術)賞 1. 三重大学2021年度優秀論文・著書・作品賞 2022.03
2. 電気学会2021年電子・情報・システム部門技術委員会奨励賞 2022.01
3. The 7th International Conference on Light Emitting Devices and Their Industrial Applications (LEDIA2019), Young Researcher’s Paper Award. 2019.04
4. 第79回応用物理学会秋季学術講演会 講演奨励賞 2018.09
5. 第10回ナノ構造・エピタキシャル成長講演会 研究奨励賞 2018.07
専門分野 半導体工学
結晶成長
窒化物半導体
現在の研究課題 低転位密度AlNテンプレートの開発
高効率深紫外LEDの開発
高耐圧・高速電子デバイスの開発
担当科目  
主な業績等 1. Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Shiyu Xiao, Takao Nakamura, Masataka Kubo, and Hideto Miyake, “263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities”, Appl. Phys. Express 15, 055501 (2022). https://doi.org/10.35848/1882-0786/ac66c2
2. Kenjiro Uesugi and Hideto Miyake, “Fabrication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs”, Jpn. J. Appl. Phys. 60, 120502 (2021). https://doi.org/10.35848/1347-4065/ac3026
3. Hideaki Murotani, Atsushi Fujii, Ryota Oshimura, Takafumi Kusaba, Kenjiro Uesugi, Hideto Miyake, and Yoichi Yamada, “Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates”, Appl. Phys. Express 14, 122004 (2021). https://doi.org/10.35848/1882-0786/ac3802
4. Yusuke Hayashi, Kenjiro Uesugi, Kanako Shojiki, Tetsuya Tohei, Akira Sakai, and Hideto Miyake, “Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing”, AIP Advances 11, 095012 (2021). https://doi.org/10.1063/5.0059723
5. Kanako Shojiki, Kenjiro Uesugi, Shigeyuki Kuboya, and Hideto Miyake, “Reduction of threading dislocation densities of N-polar face-to-face annealed sputtered AlN on sapphire”, J. Cryst. Growth 574, 126304 (2021). https://doi.org/10.1016/j.jcrysgro.2021.126309
6. Kenjiro Uesugi, Kanako Shojiki, Shiyu Xiao, Shigeyuki Kuboya, and Hideto Miyake, “Effect of the Sputtering Deposition Conditions on the Crystallinity of High-Temperature Annealed AlN films”, Coatings 11, 956 (2021). https://doi.org/10.3390/coatings11080956
7. Yukino Iba, Kanako Shojiki, Shigeyuki Kuboya, Kenjiro Uesugi, Shiyu Xiao, and Hideto Miyake, “Effect of MOVPE growth conditions on AlN films on annealed sputtered AlN templates with nano-striped patterns”, J. Cryst. Growth 570, 126237 (2021). https://doi.org/10.1016/j.jcrysgro.2021.126237
8. Yuya Sakurai, Kohei Ueno, Atsushi Kobayashi, Kenjiro Uesugi, Hideto Miyake, and Hiroshi Fujioka, “High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High-Temperature Annealing”, Phys. Status Solidi A 218, 2100074 (2021). https://doi.org/10.1002/pssa.202100074
9. Kanako Shojiki, Kenjiro Uesugi, Shigeyuki Kuboya, Takafumi Inamori, Shin Kawabata, and Hideto Miyake, “High-Quality AlN Template Prepared by Face-to-Face Annealing of Sputtered AlN on Sapphire”, Phys. Status Solidi B 258, 2000352 (2020). https://doi.org/10.1002/pssb.202000352
10. Ding Wang, Kenjiro Uesugi, Shiyu Xiao, Kenji Norimatsu, and Hideto Miyake, "High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light‐emitting diodes", Appl. Phys. Express 14, 035505 (2021). https://doi.org/10.35848/1882-0786/abe522
11. Akira Uedono, Kanako Shojiki, Kenjiro Uesugi, Shigefusa F. Chichibu, Shoji Ishibashi, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, and Hideto Miyake, “Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams”, J. Appl. Phys. 128, 085704 (2020). https://doi.org/10.1063/5.0015225
12. Ding Wang, Kenjiro Uesugi, Shiyu Xiao, Kenji Norimatsu, and Hideto Miyake, “Low dislocation density AlN on sapphire prepared by double sputtering and annealing”, Appl. Phys. Express 13, 095501 (2020). https://doi.org/10.35848/1882-0786/ababec
13. Shigeyuki Kuboya, Kenjiro Uesugi, Kanako Shojiki, Yuta Tezen, Kenji Norimatsu, and Hideto Miyake, “Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer”, J. Cryst. Growth 545, 125722 (2020). https://doi.org/10.1016/j.jcrysgro.2020.125722
14. Kenjiro Uesugi, Kanako Shojiki, Yuta Tezen, Yusuke Hayashi, and Hideto Miyake, “Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template”, Appl. Phys. Lett. 116, 062101 (2020). https://doi.org/10.1063/1.5141825
15. Yukino Iba, Kanako Shojiki, Kenjiro Uesugi, Shiyu Xiao, and Hideto Miyake, “MOVPE growth of AlN films on nano-patterned sapphire substrates with annealed AlN”, J. Cryst. Growth 532, 125397 (2020). https://doi.org/10.1016/j.jcrysgro.2019.125397
16. Tatsuya Shirato, Yusuke Hayashi, Kenjiro Uesugi, Kanako Shojiki, and Hideto Miyake, “High-Temperature Annealing of Sputter-Deposited AlN on (001) Diamond Substrate”, Phys. Status Solidi B 257, 1900447 (2020). https://doi.org/10.1002/pssb.201900447
17. Kanako Shojiki, Ryota Ishii, Kenjiro Uesugi, Mitsuru Funato, Yoichi Kawakami, and Hideto Miyake, “Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells”, AIP Advances 9, 125342 (2019). https://doi.org/10.1063/1.5125799
18. Kanako Shojiki, Yusuke Hayashi, Kenjiro Uesugi, and Hideto Miyake, “Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy”, Jpn. J. Appl. Phys. 58, SCCB17 (2019). https://doi.org/10.7567/1347-4065/ab0d07
19. Kenjiro Uesugi, Yusuke Hayashi, Kanako Shojiki, and Hideto Miyake, “Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures”, Appl. Phys. Express 12, 065501 (2019). https://doi.org/10.7567/1882-0786/ab1ab8
20. Kentaro Nagamatsu, Xiaotong Liu, Kenjiro Uesugi, and Hideto Miyake, “Improved emission intensity of UVC-LEDs using strain-relaxation layer on sputter anneal AlN”, Jpn. J. Appl. Phys. 58, SCCC07 (2019). https://doi.org/10.7567/1347-4065/ab07a1
21. Shiyu Xiao, Nan Jiang, Kanako Shojiki, Kenjiro Uesugi, and Hideto Miyake, “Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy”, Jpn. J. Appl. Phys. 58, SC1003 (2019). https://doi.org/10.7567/1347-4065/ab0ad4
22. Yusuke Hayashi, Kentaro Tanigawa, Kenjiro Uesugi, Kanako Shojiki, and Hideto Miyake, “Curvature-controllable and Crack-free AlN/Sapphire Templates Fabricated by Sputtering and High-temperature Annealing”, J. Cryst. Growth 512, 131 (2019). https://doi.org/10.1016/j.jcrysgro.2019.02.026
23. Shuichi Tanaka, Kanako Shojiki, Kenjiro Uesugi, Yusuke Hayashi, and Hideto Miyake, “Quantitative evaluation of strain-relaxation in annealed sputter-deposited AlN film”, J. Cryst. Growth 512, 16 (2019). https://doi.org/10.1016/j.jcrysgro.2019.02.001
24. Kenjiro Uesugi, Yusuke Hayashi, Kanako Shojiki, Shiyu Xiao, Kentaro Nagamatsu, Harumasa Yoshida, and Hideto Miyake, “Fabrication of AlN templates on SiC substrates by sputtering deposition and high-temperature annealing”, J. Cryst. Growth 510, 13 (2019). https://doi.org/10.1016/j.jcrysgro.2019.01.011
25. Kenjiro Uesugi, Aya Shindome, Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Toshiki Hikosaka, Masahiko Kuraguchi, and Shinya Nunoue, “Improvement of channel mobility of GaN-MOSFETs with thermal treatment for recess surface”, Phys. Status Solidi A 215, 1700511 (2018). https://doi.org/10.1002/pssa.201700511
26. Kenjiro Uesugi, Toshiki Hikosaka, Hiroshi Ono, Tatsunori Sakano, and Shinya Nunoue, “Reduction of basal plane defects in (11–22) semipolar InGaN/GaN MQWs fabricated on patterned (113) Si substrates by introducing AlGaN barrier layers”, Phys. Status Solidi A 214, 1600823 (2016). https://doi.org/10.1002/pssa.201600823
27. Shigeya Kimura, Hisashi Yoshida, Kenjiro Uesugi, Toshihide Ito, Aoi Okada, and Shinya Nunoue, “Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers”, J. Appl. Phys. 120, 113104 (2016). https://doi.org/10.1063/1.4962719
28. Jumpei Tajima, Hiroshi Ono, Toshihide Ito, Kenjiro Uesugi, and Shinya Nunoue, “Fabrication and characteristics of high-power multi-junction LEDs using GaN-on-Si technologies”, Phys. Status Solidi A 213, 1177 (2016). https://doi.org/10.1002/pssa.201532776
29. Pornsiri Wanarattikan, Sakuntam Sanorpim, Somyod Denchitcharoen, Visittapong Yordsri, Chanchana Thanachayanont, Kenjiro Uesugi, Shigeyuki Kuboya, and Kentaro Onabe, “TEM Analysis of Planar Defects in InGaAsN and GaAs Grown on Ge (001) by MOVPE”, Key Eng. Mat. 657, 639 (2016). https://doi.org/10.4028/www.scientific.net/KEM.675-676.639
30. Pornsiri Wanarattikan, Sakuntam Sanorpim, Somyod Denchitcharoen, Kenjiro Uesugi, Shigeyuki Kuboya, and Kentaro Onabe, “Influences of two-step growth and off-angle Ge substrate on crystalline quality of GaAs buffer layers grown by MOVPE”, J. Cryst. Growth 414, 15 (2015). https://doi.org/10.1016/j.jcrysgro.2014.11.027
31. Kenjiro Uesugi, Shigeyuki Kuboya, Sakuntam Sanorpim, and Kentaro Onabe, “Characterization of InGaAsN solar-cell structures on Ge substrates”, Phys. Status Solidi C 11, 561 (2014). https://doi.org/10.1002/pssc.201300488
32. Pornsiri Wanarattikan, Sakuntam Sanorpim, Somyod Denchitcharoen, Kenjiro Uesugi, Takehiko Kikuchi, Shigeyuki Kuboya, and Kentaro Onabe, “Effect of N incorporation on growth behavior of InGaAsN/GaAs/Ge multi-layered structure by MOVPE”, Adv. Mat. Res. 802, 129 (2013). https://doi.org/10.4028/www.scientific.net/AMR.802.129
33. Kenjiro Uesugi, Shigeyuki Kuboya, Sakuntam Sanorpim, and Kentaro Onabe, “Photoluminescence properties of InGaAsN films on Ge(001) vicinal substrates”, J. Cryst. Growth 370, 46 (2013). https://doi.org/10.1016/j.jcrysgro.2012.09.024
34. Kenjiro Uesugi, Takehiko Kikuchi, Shigeyuki Kuboya, Sakuntam Sanorpim, and Kentaro Onabe, “MOVPE growth of InGaAsN films on Ge(001) on-axis and vicinal substrates”, Phys. Status Solidi C 9, 542 (2012). https://doi.org/10.1002/pssc.201100360

その他
上杉謙次郎, 王丁, 正直花奈子, 窪谷茂幸, 三宅秀人, “深紫外LED応用に向けた低転位密度AlNの作製”, 日本結晶成長学会誌 47, 3-02 (2020).