職名 助教
氏名 うえすぎ けんじろう
上杉 謙次郎
生年月 1988.12
所属 部局 地域創生戦略企画室
学科・専攻  
講座  
教育研究分野  
TEL 059-231-6995
FAX 059-231-9905
E-mail k.uesugi@opri. (末尾に mie-u.ac.jp を補ってください)
個人のホームページ https://researchmap.jp/uesugikenjiro
学歴 2011.03 東京大学工学部 物理工学科 卒業
2013.03 東京大学大学院新領域創成科学研究科 物質系専攻 修了
学位 2013.03 修士 (科学) 東京大学
2019.09 博士 (学術) 三重大学
所属学会 応用物理学会
日本結晶成長学会
社会活動  
職歴 2013.04 ~ 2017.12 株式会社東芝 研究開発センター 電子デバイスラボラトリー
2018.01 ~ 2018.06 三重大学 地域イノベーション推進機構 地域戦略センター 研究員
2018.07 ~ 2019.08 三重大学 地域創生戦略企画室 研究員
2019.09 ~ 三重大学 地域創生戦略企画室 助教
学術(芸術)賞 1. The 7th International Conference on Light Emitting Devices and Their Industrial Applications (LEDIA2019), Young Researcher’s Paper Award. 2019.04
2. 第79回応用物理学会秋季学術講演会 講演奨励賞 2018.09
3. 第10回ナノ構造・エピタキシャル成長講演会 研究奨励賞 2018.07
専門分野 半導体工学
結晶成長
窒化物半導体
現在の研究課題 高効率深紫外LEDの開発
低転位密度AlNテンプレートの開発
担当科目  
主な業績等 1. K. Uesugi and H. Miyake, “Fablication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs”, Jpn. J. Appl. Phys 60, 120502 (2021).
2. H. Murotani, A. Fujii, R. Oshimura, T. Kusaba, K. Uesugi, H. Miyake, and Y. Yamaguchi, “Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates”, Appl. Phys. Express 14, 122004 (2021).
3. Y. Hayashi, K. Uesugi, K. Shojiki, T. Tohei, A. Sakai, and H. Miyake, “Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing”, AIP Advances 11, 095012 (2021).
4. K. Shojiki, K. Uesugi, S. Kuboya, and H. Miyake, “Reduction of threading dislocation densities of N-polar face-to-face annealed sputtered AlN on sapphire”, J. Cryst. Growth 574, 126304 (2021).
5. K. Uesugi, K. Shojiki, S. Xiao, S. Kuboya, and H. Miyake, “Effect of the Sputtering Deposition Conditions on the Crystallinity of High-Temperature Annealed AlN films”, Coatings 11, 956 (2021).
6. Y. Iba, K. Shojiki, S. Kuboya, K. Uesugi, S. Xiao, and H. Miyake, “Effect of MOVPE growth conditions on AlN films on annealed sputtered AlN templates with nano-striped patterns”, J. Cryst. Growth 570, 126237 (2021).
7. Y. Sakurai, K. Ueno, A. Kobayashi, K. Uesugi, H. Miyake, and H. Fujioka, “High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High-Temperature Annealing”, Phys. Status Solidi B 258, 2100074 (2021).
8. K. Shojiki, K. Uesugi, S. Kuboya, T. Inamori, S. Kawabata, and H. Miyake, “High-Quality AlN Template Prepared by Face-to-Face Annealing of Sputtered AlN on Sapphire”, Phys. Status Solidi B 258, 2000352 (2020).
9. D. Wang, K. Uesugi, S. Xiao, K. Norimatsu, and H. Miyake, "High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light‐emitting diodes", Appl. Phys. Express 14, 035505 (2021).
10. A. Uedono, K. Shojiki, K. Uesugi, S. F. Chichibu, S. Ishibashi, M. Dickmann, W. Egger, C. Hugenschmidt, and H. Miyake, “Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams”, J. Appl. Phys. 128, 085704 (2020).
11. D. Wang, K. Uesugi, S. Xiao, K. Norimatsu, and H. Miyake, “Low dislocation density AlN on sapphire prepared by double sputtering and annealing”, Appl. Phys. Express 13, 095501 (2020).
12. S. Kuboya, K. Uesugi, K. Shojiki, Y. Tezen, K. Norimatsu, and H. Miyake, “Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer”, J. Cryst. Growth 545, 125722 (2020).
13. K. Uesugi, K. Shojiki, Y. Tezen, Y. Hayashi, and H. Miyake, “Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template”, Appl. Phys. Lett. 116, 062101 (2020).
14. Y. Iba, K. Shojiki, K. Uesugi, S. Xiao, and H. Miyake, “MOVPE growth of AlN films on nano-patterned sapphire substrates with annealed AlN”, J. Cryst. Growth 532, 125397 (2020).
15. T. Shirato, Y. Hayashi, K. Uesugi, K. Shojiki, and H. Miyake, “High-Temperature Annealing of Sputter-Deposited AlN on (001) Diamond Substrate”, Phys. Status Solidi B 257, 1900447 (2020).
16. K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami, and H. Miyake, “Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells”, AIP Advances 9, 125342 (2019).
17. K. Shojiki, Y. Hayashi, K. Uesugi, and H. Miyake, “Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy”, Jpn. J. Appl. Phys. 58, SCCB17 (2019).
18. K. Uesugi, Y. Hayashi, K. Shojiki, and H. Miyake, “Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures”, Appl. Phys. Express 12, 065501 (2019).
19. K. Nagamatsu, X. Liu, K. Uesugi, and H. Miyake, “Improved emission intensity of UVC-LEDs using strain-relaxation layer on sputter anneal AlN”, Jpn. J. Appl. Phys. 58, SCCC07 (2019).
20. S. Xiao, N. Jiang, K. Shojiki, K. Uesugi, and H. Miyake, “Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy”, Jpn. J. Appl. Phys. 58, SC1003 (2019).
21. Y. Hayashi, K. Tanigawa, K. Uesugi, K. Shojiki, and H. Miyake, “Curvature-controllable and Crack-free AlN/Sapphire Templates Fabricated by Sputtering and High-temperature Annealing”, J. Cryst. Growth 512, 131 (2019).
22. S. Tanaka, K. Shojiki, K. Uesugi, Y. Hayashi, and H. Miyake, “Quantitative evaluation of strain-relaxation in annealed sputter-deposited AlN film”, J. Cryst. Growth 512, 16 (2019).
23. K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, K. Nagamatsu, H. Yoshida, and H. Miyake, “Fabrication of AlN templates on SiC substrates by sputtering deposition and high-temperature annealing”, J. Cryst. Growth 510, 13 (2019).
24. K. Uesugi, A. Shindome, Y. Kajiwara, T. Yonehara, D. Kato, T. Hikosaka, M. Kuraguchi, and S. Nunoue, “Improvement of channel mobility of GaN-MOSFETs with thermal treatment for recess surface”, Phys. Status Solidi A 215, 1700511 (2018).
25. K. Uesugi, T. Hikosaka, H. Ono, T. Sakano, and S. Nunoue, “Reduction of basal plane defects in (11–22) semipolar InGaN/GaN MQWs fabricated on patterned (113) Si substrates by introducing AlGaN barrier layers”, Phys. Status Solidi A 214, 1600823 (2017).
26. S. Kimura, H. Yoshida, K. Uesugi, T. Ito, A. Okada, and S. Nunoue, “Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers”, J. Appl. Phys. 120, 113104 (2016).
27. J. Tajima, H. Ono, T. Ito, K. Uesugi, and S. Nunoue, “Fabrication and characteristics of high-power multi-junction LEDs using GaN-on-Si technologies”, Phys. Status Solidi A 213, 1177 (2016).
28. P. Wanarattikan, S. Sanorpim, S. Denchitcharoen, V. Yordsri, C. Thanachayanont, K. Uesugi, S. Kuboya, and K. Onabe, “TEM Analysis of Planar Defects in InGaAsN and GaAs Grown on Ge (001) by MOVPE”, Key Eng. Mat. 657, 639 (2016).
29. P. Wanarattikan, S. Sanorpim, S. Denchitcharoen, K. Uesugi, S. Kuboya, and K. Onabe, “Influences of two-step growth and off-angle Ge substrate on crystalline quality of GaAs buffer layers grown by MOVPE”, J. Cryst. Growth 414, 15 (2015).
30. K. Uesugi, S. Kuboya, S. Sanorpim, and K. Onabe, “Characterization of InGaAsN solar-cell structures on Ge substrates”, Phys. Status Solidi C 11, 561 (2014).
31. P. Wanarattikan, S. Sanorpim, S. Denchitcharoen, K. Uesugi, T. Kikuchi, S. Kuboya, and K. Onabe, “Effect of N incorporation on growth behavior of InGaAsN/GaAs/Ge multi-layered structure by MOVPE”, Adv. Mat. Res. 802, 129 (2013).
32. K. Uesugi, S. Kuboya, S. Sanorpim, and K. Onabe, “Photoluminescence properties of InGaAsN films on Ge(001) vicinal substrates”, J. Cryst. Growth 370, 46 (2013).
33. K. Uesugi, T. Kikuchi, S. Kuboya, S. Sanorpim, and K. Onabe, “MOVPE growth of InGaAsN films on Ge(001) on-axis and vicinal substrates”, Phys. Status Solidi C 9, 542 (2012).

その他
上杉謙次郎, 王丁, 正直花奈子, 窪谷茂幸, 三宅秀人, “深紫外LED応用に向けた低転位密度AlNの作製”, 日本結晶成長学会誌 47, 3-02 (2020).