| 教員紹介トップページへ | 三重大学トップページへ |
| 職名 | 教授 | ||||||||||||||||
| 氏名 | やお よんちゃお 姚 永昭 |
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| 生年月 | 1978.12 | ||||||||||||||||
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| TEL | 内線：6915 | ||||||||||||||||
| FAX | |||||||||||||||||
| yao@icsdf. (末尾に mie-u.ac.jp を補ってください) | |||||||||||||||||
| ｒｅｓｅａｒｃｈｍａｐ | https://researchmap.jp/JFCCYAO/ | ||||||||||||||||
| 三重大学全学SEEDS集 | |||||||||||||||||
| 個人のホームページ | |||||||||||||||||
| 学歴 | 筑波大学, 数理物質科学研究科, 物質材料工学専攻 博士課程・博士後期課程 (～2007年) 卒業・修了
中国清華大学大学院, 電気電子工学研究科, 電気電子工学専攻 修士課程・博士前期課程 (～2004年) 卒業・修了 |
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| 学位 | 2007.12 博士（工学） 筑波大学
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| 所属学会 | ・応用物理学会
・応用物理学会 先進パワー半導体分科会 ・結晶成長学会 ・SPring-8ユーザー協同体 ・KEK-PFユーザーアソシエーション |
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| 社会活動 | ・高エネルギー加速器研究機構 Photon Factory User Association, 運営委員会委員
・文部科学省 科学技術予測・政策基盤調査研究センター, 科学技術専門家ネットワーク・専門調査員 ・SPring-8/SACLA成果審査委員会査読者 ・国際会議DRIP (International Conference on Defects-Recognition, Imaging and Physics in Semiconductors) 国際運営委員 International Steering Committee ・国際標準化, GaN結晶の転位検出方法に関する国際標準化 委員 |
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| 職歴 | ・2008-2009 物質材料研究機構（NIMS）ポスドク
・2009-2024 ファインセラミックスセンター 上級研究員→主任研究員→機能性材料G グループ長 ・2024より 三重大学 半導体・デジタル未来創造センター 教授 |
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| 学術（芸術）賞 | ・2024年度（第51回）研究助成,公益財団法人 岩谷直治記念財団,公益財団法人 岩谷直治記念財団
・2023年度 研究助成,公益財団法人 池谷科学技術振興財団,公益財団法人 池谷科学技術振興財団 ・2022年度（第54回）倉田奨励金,公益財団法人 日立財団,公益財団法人 日立財団 ・2022年度 基礎科学研究助成,公益財団法人 住友財団,公益財団法人 住友財団 ・2021年度 研究助成,公益財団法人 大倉和親記念財団,公益財団法人 大倉和親記念財団 ・第46回 学術写真賞 優秀賞,公益社団法人 日本セラミックス協会,公益社団法人 日本セラミックス協会 ・2021年度 研究助成,公益財団法人 村田学術振興財団,公益財団法人 村田学術振興財団 ・第45回 学術写真賞 特別賞,公益社団法人 日本セラミックス協会,公益社団法人 日本セラミックス協会 ・第42回 研究助成,公益財団法人 日本板硝子材料工学助成会,公益財団法人 日本板硝子材料工学助成会 ・2019年度 共同研究奨励金,公益財団法人 永井科学技術財団,公益財団法人 永井科学技術財団 ・第12回 応用物理学会Poster Award,公益社団法人 応用物理学会,公益社団法人 応用物理学会 ・第35回（2013年度）応用物理学会 論文賞,公益社団法人 応用物理学会,公益社団法人 応用物理学会 ・2012年 Journal of the Ceramic Society of Japan 優秀論文賞,公益社団法人 日本セラミックス協会,公益社団法人 日本セラミックス協会 ・平成23年度 技術振興賞,一般社団法人 日本ファインセラミックス協会,一般社団法人 日本ファインセラミックス協会 ・第11回 講演会 講演奨励賞,公益社団法人 日本表面科学会 中部支部,公益社団法人 日本表面科学会 中部支部 ・第5回 元東京大学総長 向坊 隆 記念研究奨励賞,一般社団法人 日中科学技術交流協会,一般社団法人 日中科学技術交流協会 |
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| 専門分野 | ・結晶工学
・パワーデバイス ・欠陥物理 ・放射光XRT ・オペランド観測 |
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| 現在の研究課題 | 半導体結晶中の欠陥のオペランド観察技術の開発 | ||||||||||||||||
| 担当科目 | ・材料科学
・半導体デバイス工学特論 ・半導体産業特論 ・半導体デジタル概論 ・半導体デバイス工学PBL ・固体物理学 |
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| 主な業績等 | [093] R. Hattori, Y. Yao, and Y. Ishikawa, Polarization superimposed phase contrast microscope inspection of dislocations in SiC epitaxial layer, Solid State Phenom. 376, 47 (2025).
[092] N. Okada, R. Hidaka, T. Kowaki, T. Saito, Y. Sugawara, D. Yokoe, Y. Yao, Y. Ishikawa, S. Kurai, Y. Yamada, and K. Tadatomo, Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pit layers and polarity inversion, J. Appl. Phys. 136, 025705 (2024). [091] Y. Ishikawa, Y. Sugawara, Y. Yao, M. Miyoshi and T. Egawa, Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns, J. Mater. Sci. 59, 2974-2987 (2024). [090] Y. Yao, Y. Sugawara, K. Sasaki, A. Kuramata and Y. Ishikawa, Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter, J. Appl. Phys. 134, 215106-215106-17 (2023). [089] Y. Yao, Y. Tsusaka, K. Hirano, K. Sasaki, A. Kuramata, Y. Sugawara and Y. Ishikawa, Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect X-ray topography, J. Appl. Phys. 134, 155104-155104-10 (2023). [088] T. Kowaki, W. Matsumura, K. Hanasaku, R. Okuno, D. Inahara, S. Matsuda, S. Kurai, Y. Yao, Y. Ishikawa, N. Okada and Y. Yamada, Si-doping effects in AlGaN channel layer on performance of N-polar AlGaN/AlN FETs, Phys. Status Solidi A 220, 2200872-2200872-6 (2023). [087] D. Inahara, S. Matsuda, W. Matsumura, R. Okuno, K. Hanasaku, T. Kowaki, M. Miyamoto, Y. Yao, Y. Ishikawa, A. Tanaka, Y. Honda, S. Nitta, H. Amano, S. Kurai, et al., Investigation of electrical properties of N-polar AlGaN/AlN heterostructure field-effect transistors, Phys. Status Solidi A 220, 2200871-2200871-5 (2023). [086] Y. Ishikawa, Y. Sugawara, D. Yokoe, K. Sato, Y. Yao, K. Watanabe and T. Okawa, Characterization of dislocations at the emission site by emission microscopy in GaN p-n diodes, J. Mater. Sci. 58, 9221-9232 (2023). [085] Y. Yao, K. Hirano, K. Sasaki, A. Kuramata, Y. Sugawara and Y. Ishikawa, Lattice misorientation at domain boundaries in β-Ga2O3 single-crystal substrates observed via synchrotron radiation X-ray diffraction imaging and X-ray reticulography, J. Am. Ceram. Soc. 106, 5487-5500 (2023).【Editor’s Choice】 [084] S. Isaji, I. Maeda, N. Ogawa, R. Kosaka, N. Hasuike, T. Isshiki, K. Kobayashi, Y. Yao and Y. Ishikawa, Relationship between propagation angle of dislocations in β-Ga2O3 (001) bulk wafers and their etch pit shapes, J. Electron. Mater. 52, 5093-5098 (2023). [083] K. Kakimoto, I. Takahashi, T. Tomida, K. Kamada, Y. Yao, S. Nakano and A. Yoshikawa, 3D calculation studies of dislocation density in a β-Ga2O3 crystal grown by vertical Bridgman method, J. Cryst. Growth 609, 127126-127126-6 (2023). [082] Y. Yao, D. Wakimoto, H. Miyamoto, K. Sasaki, A. Kuramata, K. Hirano, Y. Sugawara and Y. Ishikawa, X-ray topographic observation of dislocations in β-Ga2O3 Schottky barrier diodes and their glide and multiplication under reverse bias, Scr. Mater. 226, 115216-115216-6 (2023). [081] L. You, W. Matsumura, K. Ataka, S. Matsuda, D. Inahara, K. Hanasaku, R. Okuno, T. Kowaki, Y. Yao, Y. Ishikawa, S. Kurai, N. Okada, K. Tadatomo and Y. Yamada, Growth and characterization of nitrogen-polar AlGaN/AlN and demonstration of field effect transistor, Jpn. J. Appl. Phys. 62, SA1018-SA1018-6 (2022). [080] Y. Ishikawa, Y. Sugawara, Y. Yao, H. Takeda, H. Aida and K. Tadatomo, Linear dependence of dislocation pattern size on the imprint width and scratch width on (0001) GaN, J. Phys. D: Appl. Phys. 55, 485304-485304-11 (2022). [079] Y. Yao, K. Hirano, Y. Sugawara and Y. Ishikawa, Domain boundaries in ScAlMgO4 single crystal observed by synchrotron radiation X-ray topography and reticulography, Semicond. Sci. Technol. 37, 115009-115009-9 (2022). [078] Y. Yao, Y. Tsusaka, K. Sasaki, A. Kuramata, Y. Sugawara and Y. Ishikawa, Large-area total-thickness imaging and Burgers vector analysis of dislocations in β-Ga2O3 using bright-field x-ray topography based on anomalous transmission, Appl. Phys. Lett. 121, 12105-012105-6 (2022).【Featured Article】 [077] Y. Ishikawa, Y. Sugawara, Y. Yao, H. Takeda, H. Aida and K. Tadatomo, Size of dislocation patterns induced by Vickers indentation in hydride vapor-phase epitaxy GaN, J. Appl. Phys. 131, 225303-225303-7 (2022). [076] Y. Yao, Y. Sugawara, K. Sato, N. Okada, K. Tadatomo and Y. Ishikawa, Observation of threading dislocations with a c+m type Burgers vector in HVPE GaN substrates using multi-photon excitation photoluminescence and TEM, J. Cryst. Growth 592, 126748-126748-6 (2022). [075] Y. Yao, K. Hirano, Y. Sugawara, K. Sasaki, A. Kuramata and Y. Ishikawa, Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron x-ray topography, APL Mater. 10, 51101-051101-9 (2022).【Editor's pick】 [074] Y. Yao, Y. Sugawara, K. Sato, D. Yokoe, K. Sasaki, A. Kuramata and Y. Ishikawa, Etch pit formation on β-Ga2O3 by molten KOH+NaOH and hot H3PO4 and their correlation with dislocations, J. Alloys Compd. 910, 164788-164788-7 (2022). [073] Y. Yao, K. Sato, Y. Sugawara, N. Okada, K. Tadatomo, K. Sasaki, A. Kuramata and Y. Ishikawa, Three-dimensional curving of crystal planes in wide bandgap semiconductor wafers visualized using a laboratory X-ray diffractometer, J. Cryst. Growth 583, 126558-126558-8 (2022). [072] Y. Yao, K. Sato, Y. Sugawara and Y. Ishikawa, Mechanism of molten KOH+NaOH etching of GaN revealed by the slopes of etch pits formed at threading dislocations, J. Alloys Compd. 902, 163830-163830-7 (2022). [071] Y. Yao, K. Hirano, H. Yamaguchi, Y. Sugawara, N. Okada, K. Tadatomo and Y. Ishikawa, A synchrotron X-ray topography study of crystallographic defects in ScAlMgO4 single crystals, J. Alloys Compd. 896, 163025-163025-14 (2021). [070] Y. Yao, Y. Sugawara, D. Yokoe, K. Hirano, N. Okada, K. Tadatomo, K. Sasaki, A. Kuramata and Y. Ishikawa, Anisotropic radius of curvature of crystal planes in wide-bandgap semiconductor wafers measured by X-ray diffraction, Jpn. J. Appl. Phys. 60, 128004-128004-5 (2021). [069] N. Okada, R. Sakamoto, K. Ataka, T. Ito, W. Matsumura, L. You, Y. Yao, Y. Ishikawa and K. Tadatomo, Deep ultraviolet emission from multiple quantum wells on flat N-polar AlN templates fabricated using periodical pulsed H2 etching, Jpn. J. Appl. Phys. 60, 125502-125502-6 (2021). [068] Y. Yao, K. Hirano, Y. Takahashi, Y. Sugawara, K. Sasaki, A. Kuramata and Y. Ishikawa, Visualization of the curving of crystal planes in β-Ga2O3 by X-ray topography, J. Cryst. Growth 576, 126376-126376-7 (2021). [067] Y. Ishikawa, Y. Sugawara, Y. Yao, N. Noguchi, Y. Takeda, H. Yamada, M. Shimizu and K. Tadatomo, Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth, Jpn. J. Appl. Phys. 60, 115501-115501-5 (2021). [066] S. Suehiro, T. Kimura, D. Yokoe, Y. Yao and Y. Ishikawa, Preparation of crystalline SiC coating from Si and C powder mixture using laser sublimation technique, J. Ceram. Soc. Jpn. 129, 310-314 (2021). [065] Y. Yao, Y. Sugawara, Y. Ishikawa and K. Hirano, X-ray topography of crystallographic defects in wide-bandgap semiconductors using a high-resolution digital camera, Jpn. J. Appl. Phys. 60, 10908-010908-5 (2021). [064] Y. Yao, Y. Sugawara, D. Yokoe, K. Sato, Y. Ishikawa, N. Okada, K. Tadatomo, M. Sudo, M. Kato, M. Miyoshi and T. Egawa, Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy, CrystEngComm 22, 8299-8312 (2020).【該当号表紙】 [063] Y. Yao, Y. Ishikawa and Y. Sugawara, Slip planes in monoclinic β-Ga2O3 revealed from its {010} face via synchrotron X-ray diffraction and X-ray topography, Jpn. J. Appl. Phys. 59, 125501-125501-9 (2020). [062] Y. Ishikawa, Y. Sugawara, K. Sato, Y. Yao, N. Okada and K. Tadatomo, Identification of fine structures at the surface of epi-ready GaN wafer observed by confocal differential interference contrast microscopy, Jpn. J. Appl. Phys. 59, 100907-100907-4 (2020). [061] Y. Ishikawa, Y. Sugawara, D. Yokoe and Y. Yao, Screw dislocations on {1-212} pyramidal planes induced by Vickers indentation in HVPE GaN, Jpn. J. Appl. Phys. 59, 91005-091005-7 (2020). [060] Y. Yao, Y. Tsusaka, Y. Ishikawa, Y. Sugawara, Y. Fujita, J. Matsui, N. Okada and K. Tadatomo, Study of dislocations in AlN single-crystal using bright-field synchrotron x-ray topography under a multiple-beam diffraction condition, Appl. Phys. Lett. 117, 92102-092102-5 (2020). [059] K. Ogawa, N. Ogawa, R. Kosaka, T. Isshiki, T. Aiso, M. Iyoki, Y. Yao and Y. Ishikawa, AFM observation of etch-pit shapes on β-Ga2O3 (001) surface formed by molten alkali etching, Mater. Sci. Forum 1004, 512-518 (2020). [058] K. Ogawa, N. Ogawa, R. Kosaka, T. Isshiki, Y. Yao and Y. Ishikawa, Three-dimensional observation of internal defects in a β-Ga2O3 (001) wafer using the FIB-SEM serial sectioning method, J. Electron. Mater. 49, 5190-5195 (2020). [057] W. Yi, A. Kumar, J. Uzuhashi, T. Kimura, R. Tanaka, S. Takashima, M. Edo, Y. Yao, Y. Ishikawa, J. Chen, T. Ohkubo, T. Sekiguchi and K. Hono, Mg diffusion and activation along threading dislocations in GaN, Appl. Phys. Lett. 116, 242103-242103-5 (2020). [056] Y. Yao, Y. Ishikawa and Y. Sugawara, Dislocation classification of a large-area β-Ga2O3 single crystal via contrast analysis of affine-transformed X-ray topographs, J. Cryst. Growth 548, 125825-125825-7 (2020). [055] Y. Yao, Y. Sugawara and Y. Ishikawa, Identification of Burgers vectors of dislocations in monoclinic β-Ga2O3 via synchrotron x-ray topography, J. Appl. Phys. 127, 205110-205110-15 (2020). [054] Y. Yao, Y. Sugawara and Y. Ishikawa, Observation of dislocations in β-Ga2O3 single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy, Jpn. J. Appl. Phys. 59, 45502-045502-11 (2020). [053] Y. Yao, Y. Sugawara, Y. Ishikawa, N. Okada and K. Tadatomo, Crystallinity evaluation and dislocation observation for an aluminum nitride single-crystal substrate on a wafer scale, J. Electron. Mater. 49, 5144-5153 (2020). [052] T. Ito, R. Sakamoto, T. Isono, Y. Yao, Y. Ishikawa, N. Okada and K. Tadatomo, Growth and characterization of nitrogen‐polar AlGaN/AlN heterostructure for high‐electron‐mobility transistor, Phys. Status Solidi B 257, 1900589-1900589-6 (2020). [051] T. Isono, T. Ito, R. Sakamoto, Y. Yao, Y. Ishikawa, N. Okada and K. Tadatomo, Growth of N‐polar aluminum nitride on vicinal sapphire substrates and aluminum nitride bulk substrates, Phys. Status Solidi B 257, 1900588-1900588-6 (2020). [050] Y. Yao, Y. Ishikawa and Y. Sugawara, Revelation of dislocations in β-Ga2O3 substrates grown by edge-defined film-fed growth, Phys. Status Solidi A 217, 1900630-1900630-6 (2020).【該当号表紙】 [049] Y. Yao, Y. Ishikawa and Y. Sugawara, X-ray diffraction and Raman characterization of β-Ga2O3 single crystal grown by edge-defined film-fed growth method, J. Appl. Phys. 126, 205106-205106-9 (2019).【Editor's Pick】 [048] Y. Yao, Y. Sugawara, Y. Ishikawa, N. Okada, K. Tadatomo, Y. Takahashi and K. Hirano, Observation of dislocations and their arrays in physical vapor transport-grown AlN single-crystal substrate by synchrotron X-ray topography, Jpn. J. Appl. Phys. 58, SCCB29-SCCB29-5 (2019). [047] M. Sudo, Y. Ishikawa, Y. Yao, Y. Sugawara and M. Kato, Expansion of basal plane dislocation in 4H-SiC epitaxial layer on a-plane by electron beam irradiation, Mater. Sci. Forum 924, 151-154 (2018). [046] Y. Ishikawa, M. Sudo, Y. Yao, Y. Sugawara and M. Kato, Expansion of a single Shockley stacking fault in a 4H-SiC (11-20) epitaxial layer caused by electron beam irradiation, J. Appl. Phys. 123, 225101-225101-6 (2018). [045] S. Usami, Y. Ando, A. Tanaka, K. Nagamatsu, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, H. Amano, Y. Sugawara, Y. Yao and Y. Ishikawa, Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate, Appl. Phys. Lett. 112, 182106-182106-4 (2018). [044] Y. Yao, Y. Ishikawa, Y. Sugawara, Y. Takahashi and K. Hirano, Observation of threading dislocations in ammonothermal gallium nitride single crystal using synchrotron X-ray topography, J. Electron. Mater. 47, 5007-5012 (2018). [043] Y. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada and K. Tadatomo, Dislocation revelation and categorization for thick free-standing GaN substrates grown by HVPE, Mater. Sci. Forum 897, 707-710 (2017). [042] Y. Yao, Y. Ishikawa, Y. Sugawara, Y. Takahashi and K. Hirano, Elementary screw and mixed-type dislocations in 4H-SiC characterized by X-ray topography taken with six equivalent 11-28 g-vectors and a comparison to etch pit evaluation, Mater. Sci. Forum 897, 185-188 (2017). [041] Y. Yao, Y. Ishikawa, M. Sudo, Y. Sugawara and D. Yokoe, Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits, J. Cryst. Growth 468, 484-488 (2017). [040] Y. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno, T. Shirai, K. Sato, T. Bessho, Y. Takahashi, Y. Yamashita and K. Hirano, Dislocations in SiC revealed by NaOH vapor etching and a comparison with X-ray topography taken with various g-vectors, Mater. Sci. Forum 858, 389-392 (2016). [039] Y. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada and K. Tadatomo, Revelation of dislocations in HVPE GaN single crystal by KOH etching with Na2O2 additive and cathodoluminescence mapping, Superlattice Microst. 99, 83-87 (2016). [038] Y. Yao, Y. Ishikawa, Y. Sugawara, H. Yamada, A. Chayahara and Y. Mokuno, Fast removal of surface damage layer from single crystal diamond by using chemical etching in molten KCl + KOH solution, Diam. Relat. Mater. 63, 86-89 (2016). [037] Y. Yao, Y. Ishikawa, Y. Sugawara and K. Sato, Removal of mechanical-polishing-induced surface damages on 4H-SiC by chemical etching and its effect on subsequent epitaxial growth, Mater. Sci. Forum 821-823, 541-544 (2015). [036] Y. Sugawara, Y. Yao, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, S. Yamaguchi, K. Nishikawa and Y. Ikuhara, Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy, Mater. Sci. Forum 778-780, 366-369 (2014). [035] Y. Ishikawa, Y. Yao, K. Sato, Y. Sugawara, Y. Okamoto and N. Hayashi, Characterization of damage induced by electric discharge machining and wiresawing with loose abrasive at subsurface of SiC crystal, Mater. Sci. Forum 778-780, 362-365 (2014). [034] Y. Ishikawa, Y. Yao, Y. Sugawara, K. Sato, Y. Okamoto, N. Hayashi, B. Dierre, K. Watanabe and T. Sekiguchi, Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining, Jpn. J. Appl. Phys. 53, 71301-071301-11 (2014). [033] Y. Yao, Y. Ishikawa, Y. Sugawara and K. Sato, Removal of mechanical-polishing-induced surface damages on 4H-SiC wafers by using chemical etching with molten KCl+KOH, Mater. Sci. Forum 778-780, 746-749 (2014). [032] Y. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno, H. Suzuki, H. Sakamoto, T. Bessho, S. Yamaguchi and K. Nishikawa, Dislocation revelation for 4H-SiC by using vaporized NaOH a possible way to distinguish edge, screw and mixed threading dislocations by etch pit method, Mater. Sci. Forum 778-780, 346-349 (2014). [031] Y. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, T. Shirai, K. Danno, H. Suzuki, H. Sakamoto, T. Bessho, B. Dierre, K. Watanabe and T. Sekiguchi, Cross-sectional observation of stacking faults in 4H-SiC by KOH etching on nonpolar {1-100} face, cathodoluminescence imaging, and transmission electron microscopy, Jpn. J. Appl. Phys. 53, 81301-081301-8 (2014). [030] Y. Yao, Y. Ishikawa, K. Sato, Y. Sugawara, K. Danno, H. Suzuki and T. Bessho, Large-area mapping of dislocations in 4H-SiC from carbon-face (000-1) by using vaporized KOH etching near 1000 oC, Mater. Sci. Forum 740-742, 829-832 (2013). [029] Y. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno, H. Suzuki, T. Bessho, S. Yamaguchi and K. Nishikawa, Correlation between etch pits formed by molten KOH+Na2O2 etching and dislocation types in heavily doped n+-4H-SiC studied by X-ray topography, J. Cryst. Growth 364, 7-10 (2013). [028] Y. Sugawara, Y. Yao, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, Y. Kawai and Y. Ikuhara, Characterization of dislocation structures in hexagonal SiC by transmission electron microscopy, Mater. Sci. Forum 725, 11-14 (2012). [027] Y. Sugawara, M. Nakamori, Y. Yao, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, S. Yamaguchi, K. Nishikawa and Y. Ikuhara, Transmission electron microscopy analysis of a threading dislocation with c+a Burgers vector in 4H-SiC, Appl. Phys. Express 5, 81301-081301-3 (2012). [026] Y. Ishikawa, K. Sato, Y. Okamoto, N. Hayashi, Y. Yao and Y. Sugawara, Dislocation formation in epitaxial film by propagation of shallow dislocations on 4H-SiC substrate, Mater. Sci. Forum 717-720, 383-386 (2012). [025] Y. Ishikawa, Y. Yao, Y. Sugawara, K. Danno, H. Suzuki, Y. Kawai and N. Shibata, Variation of etch pit size by screw dislocation tilt in 4H-SiC wafer, Mater. Sci. Forum 717-720, 367-370 (2012). [024] Y. Yao, T. Sekiguchi, T. Ohgaki, Y. Adachi and N. Ohashi, Influence of substrate nitridation on GaN and InN growth by plasma-assisted molecular-beam epitaxy, J. Ceram. Soc. Jpn. 120, 513-519 (2012).【セラ協論文賞】 [023] Y. Yao, Y. Sugawara, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, Y. Kawai and N. Shibata, Different dissociation behavior of [11-20] and non-[11-20] basal plane dislocations in 4H-SiC under electron beam irradiation, Mater. Sci. Forum 725, 45-48 (2012). [022] Y. Yao, K. Sato, Y. Sugawara, Y. Ishikawa, Y. Okamoto and N. Hayashi, Electron beam induced current observation of dislocations in 4H-SiC introduced by mechanical polishing, Mater. Sci. Forum 725, 23-26 (2012). [021] Y. Yao, Y. Ishikawa, K. Sato, Y. Sugawara, K. Danno, H. Suzuki and T. Bessho, Dislocation revelation from (000-1) carbon-face of 4H-SiC by using vaporized KOH at high temperature, Appl. Phys. Express 5, 75601-075601-3 (2012).【応物論文賞】 [020] Y. Ishikawa, Y. Yao, K. Sato, Y. Sugawara, K. Danno, H. Suzuki, T. Bessho, Y. Kawai and N. Shibata, Detection of shallow dislocations on 4H-SiC substrate by etching method, Acta Phys. Pol. A 120, A-25-A-27 (2011). [019] Y. Yao, Y. Sugawara, Y. Ishikawa, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai and N. Shibata, A simultaneous observation of dislocations in 4H-SiC epilayer and n+-substrate by using electron beam induced current, J. Appl. Phys. 109, 123524-123524-5 (2011). [018] Y. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai and N. Shibata, Molten KOH etching with Na2O2 additive for dislocation revelation in 4H-SiC epilayers and substrates, Jpn. J. Appl. Phys. 50, 75502-075502-7 (2011). [017] Y. Yao, Y. Sugawara, Y. Ishikawa, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai and N. Shibata, Dislocation analysis in highly doped n-type 4H-SiC by using electron beam induced current and KOH+Na2O2 etching, Mater. Sci. Forum 679-680, 294-297 (2011). [016] Y. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai and N. Shibata, Dislocation revelation in highly doped n-type 4H-SiC by molten KOH etching with Na2O2 additive, Mater. Sci. Forum 679-680, 290-293 (2011). [015] Y. Yao, T. Ohgaki, N. Fukata, Y. Adachi, Y. Wada, H. Haneda and N. Ohashi, Nitrogen isotopic effect in Ga15N epifilms grown by plasma-assisted molecular-beam epitaxy, Scr. Mater. 62, 516-519 (2010). [014] Y. Yao, T. Sekiguchi, T. Ohgaki, Y. Adachi and N. Ohashi, Investigation on buffer layer for InN growth by molecular beam epitaxy, J. Ceram. Soc. Jpn. 118, 152-156 (2010). [013] Y. Wang, B. Dierre, T. Sekiguchi, Y. Yao, X.L. Yuan, F. Xu and B. Shen, Surface effects on the luminescence degradation of hydride vapor-phase epitaxy-grown GaN induced by electron-beam irradiation, J. Vac. Sci. Technol. A 27, 611-613 (2009). [012] T. Yamada, H. Yamane, Y. Yao, M. Yokoyama and T. Sekiguchi, Growth of colorless transparent GaN single crystals on prismatic GaN seeds using a Ga melt and Na vapor, Mater. Res. Bull. 44, 594-599 (2009). [011] Y. Yao, T. Sekiguchi, T. Ohgaki, Y. Adachi, N. Ohashi, H. Okuno and M. Takeguchi, Periodic supply of indium as surfactant for N-polar InN growth by plasma-assisted molecular-beam epitaxy, Appl. Phys. Lett. 95, 41913-041913-3 (2009). [010] Y. Yao, T. Ohgaki, K. Matsumoto, I. Sakaguchi, Y. Wada, H. Haneda, T. Sekiguchi and N. Ohashi, Growth and characterization of isotopic natGa15N by molecular-beam epitaxy, Phys. Status Solidi C 6, S707-S710 (2009). [009] B. Dierre, X.L. Yuan, Y. Yao, M. Yokoyama and T. Sekiguchi, Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaN, J. Mater. Sci.: Mater. Electron. 19, S307-S310 (2008). [008] Y. Yao, T. Sekiguchi, N. Ohashi, Y. Adachi and T. Ohgaki, Photoluminescence and x-ray diffraction measurements of InN epifilms grown with varying In/N ratio by plasma-assisted molecular-beam epitaxy, Appl. Phys. Lett. 92, 211910-211910-3 (2008). [007] Y. Yao, T. Sekiguchi, Y. Sakuma, N. Ohashi, Y. Adachi, H. Okuno and M. Takeguchi, InN Growth by Plasma-Assisted Molecular Beam Epitaxy with Indium Monolayer Insertion, Cryst. Growth Des. 8, 1073-1077 (2008). [006] T. Yamada, H. Yamane, T. Goto, T. Yao, Y. Yao and T. Sekiguchi, Luminescence of GaN single crystals prepared by heating a Ga melt in Na-N2 atmosphere, Cryst. Res. Technol. 42, 713-717 (2007). [005] Y. Yao, T. Sekiguchi, Y. Sakuma and N. Ohashi, The influence of indium monolayer insertion on the InN epifilm grown by plasma-assisted molecular beam epitaxy, J. Cryst. Growth 301-302, 521-524 (2007). [004] T. Sekiguchi, M.R. Chandra, Y. Yao, X.L. Yuan, K. Tsuji and J.Y. Kang, Effect of the oblique excitation and detection on the cathodoluminescence spectra, Mater. Sci. Semicond. Process. 9, 19-24 (2006). [003] Y. Yao, T. Sekiguchi, Y. Sakuma, M. Miyamura and Y. Arakawa, Cathodoluminescence characterization of GaN quantum dots grown on 6H-SiC substrate by metal-organic chemical vapor deposition, Scr. Mater. 55, 679-682 (2006). [002] R. Yue, Y. Yao and L. Liu, Blue-green light emission from a-SiCx:H-based Fabry-Perot microcavities, Chinese Phys. Lett. 23, 482-485 (2006). [001] R. Buckmaster, J.H. Yoo, K. Shin, Y. Yao, T. Sekiguchi, M. Yokoyama, T. Hanada, T. Goto, M. Cho, Y. Kawazoe and T. Yao, GaN nanodot fabrication by implant source growth, Microelectronics J. 36, 456-459 (2005). |
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